Study of gamma-ray effects on relaxation oscillator based on unijunction transistor

Authors

DOI:

https://doi.org/10.15587/2706-5448.2020.210172

Keywords:

semiconductor unijunction transistor device, relaxation oscillator, gamma-irradiation dose, gamma-exposure levels.

Abstract

The object of this research is all the semiconductor unijunction transistor device (UJT) parameters that affect its operation as 1.67 kHz saw-tooth relaxation oscillator circuit under the influence of gamma-irradiation dose. Relaxation oscillators are widely used in function generators, electronic beepers, inverters, blinkers, and voltage-controlled oscillators. The properties of UJTs are like those of other semiconductor devices are greatly affect by irradiation. Its electrical characteristics and the output voltage waveforms of the relaxation oscillator circuit were investigated and plotted as a function of different gamma-dose levels. The type of semiconductor, the design of the device and the type of radiation are affected the magnitude of this change. Where, it is shown that increasing gamma dose up to 3.0 MGy leads, the peak voltage (VP) to be decreased from 3.71 Volts down to 2.9 Volts, while the valley voltage (VV) to be increases from 1.54 Volts up to 1.89 Volts, leading to a pronounced narrowing on the negative resistance region. As a result, both the output signal voltage amplitude and the frequency of the relaxation oscillator circuit were shown to be functions of the gamma-irradiation dose. Where, the initial values of the output signal voltage amplitude were reported to be 2.54 Volts decreased to the value of 2.13 Volts, while its frequency was 1.67 kHz increased up to 1.85 kHz, respectively, due to gamma-exposure levels up to 3.0 MGy using the GammaCell-220 (National Center for Radiation Research and Technology of Egypt).

Author Biographies

Abd El-Basit Wafaa, Ain-Shams University, El-Khalyfa El-Mamoun Street Abbasya, Cairo, Egypt

Assistant Professor

Department of Physics

Ashraf Mosleh Abd El-Maksood, Nuclear Materials Authority, P.O.Box 530, Maadi, Cairo, Egypt, 11728

PhD, Lecturer

Department of Electronics Engineering

References

  1. Fetahović, I., Pejović, M., Vujisić, M. (2013). Radiation Damage in Electronic Memory Devices. International Journal of Photoenergy, 2013, 1–5. doi: http://doi.org/10.1155/2013/170269
  2. Holmes-Siedle, A., Adams, L. (2002). Handbook of Radiation Effects. Oxford: Oxford University Press, 642.
  3. Managt Sci Tech, I. (2014). Study of the Emitter Characteristics (IE – VE) of UJT at Different Temperatures. International Research Journal of Management Science & Technology, 5 (6), 23–26.
  4. Waller, W. F. (Ed.) (1972). Rectifier Circuits. Macmillan Press Limited. doi: http://doi.org/10.1007/978-1-349-01200-8
  5. Bartelt, T. L. M. (2011). Industrial Automated Systems: Instrumentation and Motion Control. Delmar: Cengage Learning.
  6. Salivahanan, S., Suresh Kumar, N., Vallavara, A. (2008). Electronic Devices and Circuits. Tata McGraw-Hill Education.
  7. Abrar, M. M. (2018). Experimental investigation of synchronized UJT trigger circuitusing UJT 2N2646. International Journal of Advanced Technology and Engineering Exploration, 5 (47), 369–375. doi: http://doi.org/10.19101/ijatee.2018.546023
  8. El-Naggar, A. M., Fouda, M. E., Madian, A. H., Radwan, A. G. (2016). Reactance-less RM relaxation oscillator using exponential memristor model. 2016 28th International Conference on Microelectronics (ICM), 361–364. doi: http://doi.org/10.1109/icm.2016.7847890
  9. Nanda, S. J., Behera, S. K., Panda, G. (2009). Development of a nonlinear model of unijunction transistor using artificial immune system. 2009 World Congress on Nature & Biologically Inspired Computing (NaBIC). doi: http://doi.org/10.1109/nabic.2009.5393485
  10. Abd El-Basit, W., Awad, Z. I. M., Kamh, S. A., Soliman, F. A. S. (2015). Solar Powered Engine Based on Unijunction Transistors. IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE), 10 (5 Ver. II), 76–85.
  11. Ginoux, J.-M., Meucci, R., Euzzor, S., di Garbo, A. (2018). Torus Breakdown in a Uni Junction Memristor. International Journal of Bifurcation and Chaos, 28 (10), 1850128. doi: http://doi.org/10.1142/s0218127418501286
  12. Di Garbo, A., Euzzor, S., Ginoux, J.-M., Arecchi, F. T., Meucci, R. (2019). Delayed dynamics in an electronic relaxation oscillator. Physical Review E, 100 (3). doi: http://doi.org/10.1103/physreve.100.032224
  13. Theraja, B. L., Theraja, A. K. (2005). A Textbook of Electrical Technology, Vol. IV.
  14. Jasmine Christina, J., Karthikeyan, V. (2017). Design of Low Power Oscillator for Medical Ultrasonic Sensors with CMUT Implementation. Asian Journal of Applied Science and Technology, 1 (1), 68–72.
  15. Abd El-Basit, W., El-Ghanam, S. M., Abdel-Maksood, A. M., Kamh, S. A. E.-T., Soliman, F. A. E.-M. S. (2016). Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments. Nuclear Engineering and Technology, 48 (5), 1219–1229. doi: http://doi.org/10.1016/j.net.2016.04.009
  16. Larin, F. (1968). Radiation Effects in Semiconductor Devices. Wiley: New York.
  17. Soliman, F. A. S., Ashry, H. A. (1994). Operation of Some Semiconductors under the Influence of Gamma-radiation. Chinese Journal of Nuclear Science and Engineering, 31 (1), 19–30.
  18. Kamh, S. A., Soliman, F. A. S. (2006). Environmental conditions effect on characteristics of some unijunction and bijunction semiconductor devices. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 564 (1), 463–470. doi: http://doi.org/10.1016/j.nima.2006.03.048
  19. Home, W. E. (1970). Literature Search and Radiation Study on Electronic Parts. Final report. Kindle Edition by National Aeronautics and Space Administration NASA. Available at: https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19700022435.pdf
  20. Bao, J.-L., Zhao, H.-F., Du, L., He, L. Base Resistance in Si Unijunction Transistor Irradiated by 60Co γ-Radiation. Acta Physica Sinica, 60 (2), 028501. doi: http://doi.org/10.7498/aps.60.028501

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Published

2020-08-31

How to Cite

Wafaa, A. E.-B., & Abd El-Maksood, A. M. (2020). Study of gamma-ray effects on relaxation oscillator based on unijunction transistor. Technology Audit and Production Reserves, 4(1(54), 51–55. https://doi.org/10.15587/2706-5448.2020.210172

Issue

Vol. 4 No. 1(54) (2020): Industrial and technology systems

Section

Reports on research projects

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Copyright (c) 2020 Abd El-Basit Wafaa, Ashraf Mosleh Abd El-Maksood

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