Iwan Susanto

Politeknik Negeri Jakarta, Indonesia
PhD
Department of Materials Science and Engineering

Scopus ID: 57193796482
Researcher ID: AAW-9659-2020
Google Scholar profile: link
ORCID ID: https://orcid.org/0000-0001-7120-0374

Selected Publications:

  1. Nurzal, N., Hsu, T.-Y., Susanto, I., Yu, I.-S. (2023). Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy. Discover Nano, 18 (1). doi: https://doi.org/10.1186/s11671-023-03844-2

  2. Indra, A., Razi, R., Jasmayeti, R., Fauzan, A., Wahyudi, D., Handra, N., Subardi, A., Susanto, I., Iswandi, Purnomo, M. J. (2023). The practical process of manufacturing poly(methyl methacrylate)-based scaffolds having high porosity and high strength. Journal of the Mechanical Behavior of Biomedical Materials, 142, 105862. doi: https://doi.org/10.1016/j.jmbbm.2023.105862

  3. Atmadyaya, S., Said, M. S., Hassan, A., Rahman, F., Susanto, I., Tumianto, Yamin, Y. (2023). FMEA Approach to Extend the Engine Oil Drain Interval of a 100-t Truck: A Case Study. Progress in Engineering Technology V, 105–117. doi: https://doi.org/10.1007/978-3-031-29348-1_12

  4. Susanto, I., Tsai, C.-Y., Fachruddin, Rahmiati, T., Ho, Y.-T., Tsai, P.-Y., Yu, I.-S. (2019). The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxy. Applied Surface Science, 496, 143616. doi: https://doi.org/10.1016/j.apsusc.2019.143616

  5. Susanto, I., Kan, K.-Y., Yu, I.-S. (2017). Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy. Journal of Alloys and Compounds, 723, 21–29. doi: https://doi.org/10.1016/j.jallcom.2017.06.224

  6. Susanto, I., Tsou, T.-H., Yang, Z.-P., Lee, C.-Y., Li, H., Yu, I.-S. (2017). Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy. Journal of Alloys and Compounds, 710, 800–808. doi: https://doi.org/10.1016/j.jallcom.2017.03.320

  7. Susanto, I., Tsai, C.-Y., Ho, Y.-T., Tsai, P.-Y., Yu, I.-S. (2021). Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer. Nanomaterials, 11 (6), 1406. doi: https://doi.org/10.3390/nano11061406