Analysis of existent concepts of traditional methods of metal whiskers growing. Deposition of substance from the gas phase
DOI:
https://doi.org/10.15587/2312-8372.2016.70512Keywords:
whiskers, growing methods, metal «whiskers», gas phase, liquid phaseAbstract
Existing presentation about one of the traditional methods of metal whiskers growing – their deposition in the gas phase is considered in the article. This problem in modern conditions given enough attention, so that, no doubt, speaks about the relevance of the research topic. It is found that the whisker growth mechanism during the deposition from the gas phase is based on the dislocation theory positions, while for the growth of a perfect crystal faces must buildup thereon individual atomic layers transferred from the gas phase. It is confirmed that deposition of substances from the gas phase based on evaporation or sublimation of the starting material, its subsequent mass transport through the gas phase and condensation in the deposition zone. It is shown that the production of whiskers by crystallization method from the gas phase through the liquid commonly used for semiconductor whiskers. The peculiarity of the method is that the crystallization of vapor is performed through the liquid intermediate layer. It is analyzed that the transfer of material inside the drop using crystallization method occurs by diffusion, but crystal growth rate is determined by diffusion rate and crystallization rate of substances. Whiskers obtained by VLS, usually have no axial dislocation, their growth doesn’t occur on a screw axial dislocation, independence of their growth rate from crystal thickness is confirmed. The mechanisms of whisker growth during their deposition are investigated. The process of obtaining this group of crystals by crystallization from the gas phase through the liquid is considered.
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