Thermal modes of silicon phototransducer with focline concentrators

Authors

  • Микола Іванович Сліпченко Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166, Ukraine
  • Віктор Олександрович Письменецький Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166, Ukraine
  • Олена Сергіївна Глушко Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166, Ukraine
  • Микола Вікторович Герасименко Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.14513

Keywords:

Сoncentrator, photoconverter, solar cell, concentration factor, luminous density

Abstract

At present solar energy having certain advantages for provision of ecologically clean and wasteless production and having inexhaustible natural resources becomes leading industry in the world energy. The main problem on the way of its implementation is low efficiency of solar irradiation phototransduction by modern solar cells that can be solved by using concentrating elements, among which foclines – concentrators with flat reflective surfaces – are the easiest in realization.

This paper is devoted to the research of silicon photoconverter crystal temperature depending on change of concentration factor multiplicity and ambient temperature. At that the values of light flux concentration and heat-sink regime of focline concentrator construction were taken into account. Calculations of the temperature distribution over the crystal and side surfaces of focline concentrator are made, temperature distribution in the concentrator cross-section for various thickness of the heat sink radiator is represented.

The calculated dependences allow estimating the maximum permissible value of concentration factor and necessary conditions for heat sink without disturbance of the crystal allowed thermal conditions

Author Biographies

Микола Іванович Сліпченко, Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166

Doctor of Physics and Mathematics, Professor, Vice-Rector for Research

Department of microelectronic devices and devices

Віктор Олександрович Письменецький, Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166

Candidate of Technical Sciences, Professor

Олена Сергіївна Глушко, Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166

Trainee Researcher

Department of microelectronic devices and devices

Микола Вікторович Герасименко, Kharkov National University of Radio Electronics Lenina 14, Kharkov, Ukraine, 61166

Junior Researcher

Department of microelectronic devices and devices

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Published

2013-06-20

How to Cite

Сліпченко, М. І., Письменецький, В. О., Глушко, О. С., & Герасименко, М. В. (2013). Thermal modes of silicon phototransducer with focline concentrators. Eastern-European Journal of Enterprise Technologies, 3(5(63), 50–53. https://doi.org/10.15587/1729-4061.2013.14513

Issue

Vol. 3 No. 5(63) (2013): The applied physics and materials technology

Section

Applied physics

License

Copyright (c) 2014 Микола Іванович Сліпченко, Віктор Олександрович Письменецький, Олена Сергіївна Глушко, Микола Вікторович Герасименко

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