Correction of electrode potential of Sі-plates before formation of porous layer

Authors

  • Марія Михайлівна Воробець Yuriy Fedkovych Chernivtsi National University Kotsiubynskoho 2, Chernivtsi, 58012, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19682

Keywords:

porous silicon, electrode potential, ammonia-peroxide solution (APS), acid-peroxide solution (APS)

Abstract

The possible interrelation between the value of electrode potential φs, surface condition and mechanisms of pore formation of Si was substantiated. The influence of finishing chemical treatment method on the φs of Si-plates was investigated.

Features of φs behavior over time in media with different pH values after treatment of Si-electrode in acid-peroxide solutions (including HNO3) are treated by manifestation of incomplete surface passivation by the oxide film. It is caused by the fact that, for the course of reduction-oxidation reactions, it is necessary to reach a certain concentration in the HNO2 catalyst solution, which would "start" the NO2 recyclizationprocess.

The research results showed that treatment of Si in ammonia-peroxide solutions promotes the formation of Si-OH coating on its surface. This leads to a larger value and stabilization of the electrode potential in neutral and acidic media. In alkaline medium, hydroxide film can turn into oxide by breaking the bonds O-H that leads to the reduction of potential. According to the Pourbaix diagram analysis, the course of reactions with the formation of ionic forms of orto-silicate acid is probable in this area of pH.

Author Biography

Марія Михайлівна Воробець, Yuriy Fedkovych Chernivtsi National University Kotsiubynskoho 2, Chernivtsi, 58012

PhD, Assistant of Professor

Department of the Analytic Chemistry

References

  1. Горячев, Д. Н. Электрический способ приготовления пористого кремния с использованием внутреннего источника тока / Д. Н. Горячев, Л. В. Беляков, О. М. Сресели // Физика и техника полупроводников. – 2003. – Т.37, №4 – С.494–498.
  2. АСМ визуализация нанокристаллов Si в термическом окисле SiО2 с помощью селективного травления / М. С. Дунаевский, J. J. Grob, А. Г. Забродский [и др.] // Физика и техника полупроводников. – 2004. – Т.38, №11 – С.1294–1300.
  3. Вплив хімічної обробки на спектри фотолюмінесценції поруватих структур nc-Si–SiOx / В. А. Данько, І. З. Індутний, І. Ю. Майданчук [та ін.] // Оптоэлектроника и полупроводниковая техника. – 2006. –№41 – С.92–99.
  4. Фотолюминесцентные и электронные свойства пленок нанокристаллического кремния, легированного золотом / Э. Б. Каганович, И. М. Кизяк, С. И. Кириллова [и др.] // Физика и техника полупроводников. – 2002. – Т.36, №9 – С.1105–1110.
  5. Зимин, С. П. Пористый кремний – материал с новыми свойствами / С. П. Зимин // Соросовский образовательный журнал. –2004. – Т.8, №1. – С.101–107.
  6. Исследования методом электронного парамагнитного резонанса пленок нанокристаллического кремния, полученных импульсным лазерным осаждением / В. Я. Братусь, С. М. Окулов, Э. Б. Каганович [и др.] // Физика и техника полупроводников. – 2004. – Т.38, №5 – С.621–625.
  7. Середин, П. В. Фотолюминесцентные свойства пористого кремния и способы их модификации / П. В. Середин // Молодой ученый. – 2012. – №10. – С. 17–23.
  8. Гаврилов, С. А. Механизм кислородной пассивации пористого кремния в растворах HF:HCl:C2H5OH / С. А. Гаврилов, А. И. Белегорохов, Л. И. Белогорохова // Физика и техника полупроводников. – 2002. – Т.36, №1 – С.104–108.
  9. Исследование процесса электрохимического формирования макропор в кремнии / Л. А. Карачевцева, О. А. Литвиненко, Э. А. Маловичко [и др.] // Теоретическая и экспериментальная химия. – 2000. – Т.36, № 3. – С. 193–197.
  10. Равновесные и неравновесные электродные процессы на пористом кремнии / Е. А. Тутов, М. Н. Павленко, Е. Е. Тутов [и др.] // Письма в ЖТФ – 2006. – Т.32, №13 – С.6–11.
  11. Хрипко, С. Л. Властивості шарів поруватого кремнію та епітаксіальних шарів на його поверхні / С. Л. Хрипко // Вісник Сумського державного університету. Серія: фізика, математика, механіка –2007.–№1 – С.157–162.
  12. Воробець, М. М. Деякі критерії якості фізико-хімічної обробки поверхні кремнієвих пластин / М. М. Воробець, А. Г. Волощук, Я. Ю. Тевтуль // Наук. вісник ЧНУ, вип.307, Хімія. – Чернівці, 2006. – С.75–80.
  13. Воробець, М. М. Дослідження стабільності електрофізичних параметрів Si-пластин перед формуванням поруватого кремнію / М. М. Воробець // Восточно-Европейский журнал передовых технологий // научный журнал. – Харьков: Технологический центр, 2012. –№ 6/12 (60). – С.50–52.
  14. Зимин, С. П. Классификация электрических свойств пористого кремния / С. П. Зимин // Физика и техника полупроводников. – 2000. – Т.34, №3. – С.359–363.
  15. Воробець, М. М. Термодинамічний аналіз фізико-хімічних процесів у системі Sі–H2O / М. М. Воробець, Г. І. Воробець, Я. Ю. Тевтуль // Наук. вісник ЧНУ, вип.606, Хімія. – Чернівці, 2012. С.101–105.
  16. Gоriachеv, D. (2003). Electrical method of forming porous silicon using an internal current source [Elektrichеskii sposob prigotovleniia pоristogo kremniia s ispolzovaniem vnutrinnego istochnika tоkа]. Fizika i tekhnika poluprovodnikov [Semiconductors], 37/4, 494–498.
  17. Dunaevskii, M., Grob, J., Zabrodskii, А. [et al.] (2004). AFM imaging Si nanocrystals in the thermal oxide SiO2 using selective etching [АSМ vizualizatsiia nanokristallov Si v termicheskom оkisle SiО2 s pomoshchiu selektivnogo travleniia]. Fizika i tekhnika poluprovodnikov [Semiconductors], 38/11, 1294–1300.
  18. Dankо, V., Indutnyi, І., Mаidanchuk, І. [et al.] (2006). The effect of chemical treatment on the photoluminescence spectra of porous structures of nc-Si-SiOx [Vplyv khіmіchnоi obrobky na spektry fotoliuminestsentsii poruvatykh struktur nc-Si–SiOx]. Optoelektronika i poluprovodnikovaia technika [ Optoelectronics and semiconductor technology], 41, 92–99.
  19. Kаgаnоvich, E., Кiziak, I., Кirillоvа S. [et al.] (2002). Photoluminescent and electronic properties of nanocrystalline silicon films doped with gold [Fotoliuminestsentnyie i elektronnyie svoistva plenok nanokristallicheskogo kremniia, lehirovannogo zolotom]. Fizika i tekhnika poluprovodnikov [Semiconductors], 36/9, 1105–1110.
  20. Zimin, S. (2004). Porous silicon – a material with new properties [Pоristyi kremnii – material s novymi svоistvami]. Sorovskii obrazovatelnyi zhurnal [Soros Educational Journal], 8/1, 101–107.
  21. Bratus, V., Оkulov, S., Kaganovich, E. [et al.] (2004). Studies by electron paramagnetic resonance of nanocrystalline silicon films prepared by pulsed laser deposition [Issledovaniia metodom elektronnogo paramagnitnogo rezonansa plenok nanokristallicheskogo kremniia, poluchennykh impulsnym lazernym osazhdeniem]. Fizika i tekhnika poluprovodnikov [Semiconductors], 38/5, 621–625.
  22. Seredin, P. (2012). Photoluminescence properties of porous silicon and methods of modification [Fotoliuminestsentnye svoistva poristogo kremniia i sposoby ikh modifikatsii]. Molodoi uchenyi [A young scientist], 10, 17–23.
  23. Gavrilov, S., Belegorokhov, A., Belogorokhova, L. (2002). The mechanism of oxygen passivation of porous silicon in solutions of HF:HCl:C2H5OH [Mekhanizm kislorodnoi passivatsii poristogo kremniia v rastvorakh HF:HCl:C2H5OH]. Fizika i tekhnika poluprovodnikov [Semiconductors], 36/1, 104–108.
  24. Каrаchеvtsеvа, L., Litvinenko, О., Маlоvichkо, E. [et al.] (2000). Investigation of the electrochemical formation of macropores in silicon [Issledovanie protsessа elektrokhimicheskogo formirovaniia makropor v krеmnii]. Teoreticheskaia i eksperimentalnaia khimiia [Theoretical and Experimental Chemistry], 36/3, 193–197.
  25. Tutov, Е., Pavlenko, М., Tutov, Е. [et al.] (2006). Equilibrium and nonequilibrium electrode processes on porous silicon [Ravnovesnye i neravnovesnye elektrodnye protsessy nа poristom kremnii]. Pisma v ZhTF [Technical Physics Letters], 32/13, 6–11.
  26. Khrypko, S. (2007). Properties of porous silicon layers and epitaxial layers on the surface [Vlastyvosti shariv poruvatoho kremniiu ta epitaksialnykh shariv nа yoho poverkhni]. Visnyk Sumskoho derzhavnoho universytetu. Seriia: fizyka, matematyka, mekhanika [Science. journal of Sumy State University. Series: physics, mathematics, mechanics], 1, 157–162.
  27. Vоrоbеts, М., Voloshchuk, A., Tevtul, Ya. (2006). Some measure of quality of physicochemical treatment of a surface of silicon plates [Deiaki kryterii yakosti fizyko-khimichnoi obrobky poverchni kremniievych plastyn]. Nauk. visnyk ChNU, Khimiia [Science. journal ChNU, Chemistry], 307, 75–80.
  28. Vorobets, M. (2012). Investigation of the stability electrophysical parameters of the Si-wafers before forming porous layer [Doslidzhennia stabilnosti elektrofizychnykh parametriv Si-plastyn pered formuvanniam poryvatoho kremniiu]. Eastern-European journal of enterprise technologies, 6/12 (60), 50–52.
  29. Zimin, S. (2000). Classification of the electrical properties of porous silicon [Klassifikatsiia elektricheskikh svoistv poristogo kremniia]. Fizika i tekhnika poluprovodnikov [Semiconductors], 34/3, 359–363.
  30. Vorobets, M., Vоrоbеts, G., Tevtul, Ya. (2012). Thermodynamic analysis of physical and chemical processes in the system Si–H2O [Termodynamichnui analiz fizyko-khimichnykh protsesiv u systemi Si –H2O]. Nauk. visnyk ChNU [Khimiia. Science. journal ChNU, Chemistry], 606, 101–105.

Downloads

Published

2013-12-28

How to Cite

Воробець, М. М. (2013). Correction of electrode potential of Sі-plates before formation of porous layer. Eastern-European Journal of Enterprise Technologies, 6(12(66), 50–53. https://doi.org/10.15587/1729-4061.2013.19682

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

License

Copyright (c) 2014 Марія Михайлівна Воробець

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.