Development of interference absorptive filters on In4(Se3)1-х Te3х and CdSb basic crystals

Authors

  • Володимир Вікторович Стребежев Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine https://orcid.org/0000-0001-8962-647X
  • Сергій Васильович Нічий Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Іван Миколайович Юрійчук Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine https://orcid.org/0000-0001-6475-8337
  • Віктор Миколайович Стребежев Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2014.31731

Keywords:

interference filter, infrared region, spectral transmittance, In4Se3, CdSb crystals

Abstract

Interference absorptive cutting light filters in the near and middle IR-region on the base of In4(Se3)1-хTe3х and CdSb crystals are obtained. Substrate crystals and films systems have been investigated by raster scanning microscopy, X-ray microanalysis, optical and electrophysical measurements to determine their suitability for developing effective cutting filters. The optical properties of defects in the crystals and substrates, their influence on the characteristics of the optical filter are studied. Low density of defect is observed in In4(Se3)1-xTe3x crystals with [010] growth direction, which is prevailing for the manufacture of optical substrates. It is found that transparency of CdSb and ZnSb crystals and substrates is kept on cooling up to 77 K. The materials for film interference systems of filters different constructions and working range are chosen. Ge-SiO semiconductors are used as a film-forming material for the filters with cutoff in the middle infrared region and Te-SrF2 in the more far regions. Ontained filters are characterized by the following parameters: cutoff slope k≥0,9, mean passband Тm≥80 %, maximum transmission Тmax≥90 %. Spectral transmission characteristics of optical filters of various designs are measured, the condition of their mechanical stability and reproducibility of optical parameters are investigated.

Author Biographies

Володимир Вікторович Стребежев, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

Postgraduate 

Сергій Васильович Нічий, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

PhD, Associate professor 

Іван Миколайович Юрійчук, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

PhD, Associate professor 

Віктор Миколайович Стребежев, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

PhD, Associate professor 

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Published

2014-12-23

How to Cite

Стребежев, В. В., Нічий, С. В., Юрійчук, І. М., & Стребежев, В. М. (2014). Development of interference absorptive filters on In4(Se3)1-х Te3х and CdSb basic crystals. Eastern-European Journal of Enterprise Technologies, 6(9(72), 55–59. https://doi.org/10.15587/1729-4061.2014.31731

Issue

Vol. 6 No. 9(72) (2014): Information and controlling system

Section

Information and controlling system

License

Copyright (c) 2014 Володимир Вікторович Стребежев, Сергій Васильович Нічий, Іван Миколайович Юрійчук, Віктор Миколайович Стребежев

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