Development of diode temperature sensors with operating range up to 750 K

Vasily Krasnov, Sergey Yerochin, Oleksii Demenskyi, Gennadii Krapyvko

Abstract


The problem of expansion of the range of functioning of diode thermosensors in the region of high temperatures is considered and some of the results of the author’s research in this area are given. To solve this problem, it is proposed to use diode structures based on wide bandgap semiconductor compounds in the III-V system. The technological method of producing prototypes of high-temperature diode temperature sensors based on GaP is developed. The presented method allows manufacturing samples of diode temperature sensors, the high-temperature limit of which exceeds the limit of functioning of commercial silicon diode temperature sensors by about 200–300 K. The experimental methods of obtaining epitaxial structures of solid solutions of AlGaAs and fabricating diode temperature sensors based on them are developed. It is shown that the approach chosen in this work allows extending the thermometric characteristics of such diodes in the high-temperature region by approximately 150–250 K. The paper presents the methodology for forming InGaN device structures and production of prototype high-temperature diode temperature sensors based on them. This technique with revisions can be used for the manufacture of diode temperature sensors and other devices for high-temperature applications, the entire range of solid solutions in the InN-GaN system. The parameters and characteristics of the obtained diode temperature sensors are investigated. The results of the research can be used by specialists in the field of electronics and optoelectronics in the development and production of semiconductor devices.


Keywords


diode temperature sensors; diode thermometry; thermometric characteristic; thermal sensitivity; liquid-phase epitaxy

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References


Zhang, N., Lin, C.-M., Rao, Y., Senesky, D. G., Pisano, A. P. (2014). 4H-SiC PN diode for extreme environment temperature sensing applications. Sensors for Extreme Harsh Environments. doi: 10.1117/12.2050768

Sclar, N., Pollock, D. B. (1972). On diode thermometers. Solid-State Electronics, 15 (5), 473–480. doi: 10.1016/0038-1101(72)90149-9

Shwarts, Yu. М., Shwarts, M. M. (2005). Microelectronic thermodiode sensors of extreme electronics. Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 3, 30–33.

Kulish, N. R., Shwarts, Yu. M., Borblik, V. L., Venger, Ye. F., Sokolov, V. N. (1999). Self-consistent method for optimization of parameters of diode temperature sensors. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (2), 15–27.

Logvinenko, S. P., Alur, T. D., Zarochinceva, T. M. (1972). Termometricheskie harakteristiki smeshchennyh v pryamom napravlenii diodov iz Ge, Si, GaAs v intervale 4,2-300 K. Kriogennaya i vakuumnaya tehnika, 2, 69–78.

Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Kamalov, A. B., Kapitanchuk, L. M., Konakova, R. V. et. al. (2008). Thermal-resistant TiB x -n-GaP Schottky diodes. Semiconductors, 42 (4), 453–457. doi: 10.1134/s1063782608040143

Krasnov, V. A., Shutov, S. V., Shwarts, Y. M., Yerochin, S. Y. (2017). Determination of Ultimate Output Characteristics of Wide Bandgap Recombination-Mode Diode Temperature Sensors. Sensing and Imaging, 18 (1). doi: 10.1007/s11220-017-0178-3

Sobolev, M. M., Nikitin, V. G. (1998). High-temperature diode formed by epitaxial GaP layers. Technical Physics Letters, 24 (5), 329–331. doi: 10.1134/1.1262110

Lake Shore Cryotronics. Available at: https://www.lakeshore.com/Products/Cryogenic-Temperature-Sensors/Pages/default.aspx

Ota, S. B., Ota, S. (2012). Calibration of GaAlAs Semiconductor Diode. Journal of Modern Physics, 03 (10), 1490–1493. doi: 10.4236/jmp.2012.310184

Dalapati, P., Manik, N. B., Basu, A. N. (2013). Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode. Journal of Semiconductors, 34 (9), 092001. doi: 10.1088/1674-4926/34/9/092001

Erohin, S. Yu., Krasnov, V. A., Fonkich, A. M., Shvarc, Yu. M., Shutov, S. V. (2011). Shirokodiapazonnye termochuvstvitel'nye ehlementy datchikov temperatury na diodah AlGaAs. Tezisy 4-y Vserossiyskoy i stran-uchastnic KOOMET konferencii po problemam termometrii “Temperatura – 2011”. Sankt-Peterburg, 70–71.

Zakheim, D. A., Itkinson, G. V., Kukushkin, M. V., Markov, L. K., Osipov, O. V., Pavlyuchenko, A. S. et. al. (2014). High-power AlGaInN LED chips with two-level metallization. Semiconductors, 48 (9), 1254–1259. doi: 10.1134/s1063782614090267

Skierbiszewski, C., Siekacz, M., Turski, H., Muzioł, G., Sawicka, M., Feduniewicz-Żmuda, A. et. al. (2012). AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy. Applied Physics Express, 5 (2), 022104. doi: 10.1143/apex.5.022104

Liao, Y., Thomidis, C., Kao, C., Moustakas, T. D. (2011). AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy. Applied Physics Letters, 98 (8), 081110. doi: 10.1063/1.3559842

Krasnov, V. A., Shwarts, Yu. M., Shwarts, M. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. M. et. al. (2008). Investigation of thermometrical characteristics of p+-n-GaP diodes. Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 6 (78), 38–40.

Yerochin, S. Yu., Krasnov, V. A., Shwarts, Yu. M., Shutov, S. V. (2007). Diodes based on epitaxial gallium phosphide for high temperature thermometry. Journal of Radio Electronics, 11. Available at: http://jre.cplire.ru/jre/nov07/2/text.html

Shvarc, Yu. M., Ivashchenko, A. N., Shvarc, M. M., Kopko, D. P., Kartashev, V. I., Lucenko, N. D. (2007). Metrologicheskoe obespechenie diodnoy termometrii. Pribory, 8 (86), 5–11.

Erohin, S. Yu., Krasnov, V. A., Shvarc, Yu. M. (2011). Termometricheskie harakteristiki diodov na osnove GaAs i tverdyh rastvorov AlGaAs. Zbirnyk tez konferentsiyi molodykh vchenykh z fizyky napivprovidnykiv “Lashkarovski chytannia – 2011”. Kyiv, 170–172.

Erohin, S. Yu., Krasnov, V. A., Fonkich, A. M., Shvarc, Yu. M., Shutov, S. V. (2012). Termochuvstvitel'nye ehlementy vysokotemperaturnyh diodnyh datchikov temperatury na osnove tverdyh rastvorov AlGaAs. Materialy I Mizhnarodnoi naukovo-praktychnoi konferentsiyi “Aktualni problemy prykladnoi fizyky”. Sevastopol, 143–144.

Krasnov, V. O., Yerokhin, S. Yu. (2009). Pat. No. 47826 UA. Sposib vyznachennia efektyvnoi kontsentratsiyi osnovnykh nosiyiv zariadu v bazi shyrokozonnoho dioda. MPK H01L 21/66, G01N27/22. No. u 200909097; declareted: 03.09.2009; published: 25.02.2010, Bul. No. 4. 4 p.

Krasnov, V. A., Shutov, S. V., Shwarts, Y. M., Yerochin, S. Y. (2011). Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics. Review of Scientific Instruments, 82 (8), 086109. doi: 10.1063/1.3626902

Adirovich, E. I., Karageorgiy-Alkalaev, P. M., Leyderman, A. Yu. (1979). Toki dvoynoy inzhekcii v poluprovodnikah. Moscow: Sovetskoe radio, 320.


GOST Style Citations


4H-SiC PN diode for extreme environment temperature sensing applications / Zhang N., Lin C.-M., Rao Y., Senesky D. G., Pisano A. P. // Sensors for Extreme Harsh Environments. 2014. doi: 10.1117/12.2050768 

Sclar N., Pollock D. B. On diode thermometers // Solid-State Electronics. 1972. Vol. 15, Issue 5. P. 473–480. doi: 10.1016/0038-1101(72)90149-9 

Shwarts Yu. М., Shwarts M. M. Microelectronic thermodiode sensors of extreme electronics // Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2005. Issue 3. P. 30–33.

Self-consistent method for optimization of parameters of diode temperature sensors / Kulish N. R., Shwarts Yu. M., Borblik V. L., Venger Ye. F., Sokolov V. N. // Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. Vol. 2, Issue 2. P. 15–27.

Logvinenko S. P., Alur T. D., Zarochinceva T. M. Termometricheskie harakteristiki smeshchennyh v pryamom napravlenii diodov iz Ge, Si, GaAs v intervale 4,2-300 K // Kriogennaya i vakuumnaya tehnika. 1972. Issue 2. P. 69–78.

Thermal-resistant TiB x -n-GaP Schottky diodes / Belyaev A. E., Boltovets N. S., Ivanov V. N., Kamalov A. B., Kapitanchuk L. M., Konakova R. V. et. al. // Semiconductors. 2008. Vol. 42, Issue 4. P. 453–457. doi: 10.1134/s1063782608040143 

Determination of Ultimate Output Characteristics of Wide Bandgap Recombination-Mode Diode Temperature Sensors / Krasnov V. A., Shutov S. V., Shwarts Y. M., Yerochin S. Y. // Sensing and Imaging. 2017. Vol. 18, Issue 1. doi: 10.1007/s11220-017-0178-3 

Sobolev M. M., Nikitin V. G. High-temperature diode formed by epitaxial GaP layers // Technical Physics Letters. 1998. Vol. 24, Issue 5. P. 329–331. doi: 10.1134/1.1262110 

Lake Shore Cryotronics. URL: https://www.lakeshore.com/Products/Cryogenic-Temperature-Sensors/Pages/default.aspx

Ota S. B., Ota S. Calibration of GaAlAs Semiconductor Diode // Journal of Modern Physics. 2012. Vol. 03, Issue 10. P. 1490–1493. doi: 10.4236/jmp.2012.310184 

Dalapati P., Manik N. B., Basu A. N. Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode // Journal of Semiconductors. 2013. Vol. 34, Issue 9. P. 092001. doi: 10.1088/1674-4926/34/9/092001 

Shirokodiapazonnye termochuvstvitel'nye ehlementy datchikov temperatury na diodah AlGaAs / Erohin S. Yu., Krasnov V. A., Fonkich A. M., Shvarc Yu. M., Shutov S. V. // Tezisy 4-y Vserossiyskoy i stran-uchastnic KOOMET konferencii po problemam termometrii “Temperatura – 2011”. Sankt-Peterburg, 2011. P. 70–71.

High-power AlGaInN LED chips with two-level metallization / Zakheim D. A., Itkinson G. V., Kukushkin M. V., Markov L. K., Osipov O. V., Pavlyuchenko A. S. et. al. // Semiconductors. 2014. Vol. 48, Issue 9. P. 1254–1259. doi: 10.1134/s1063782614090267 

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy / Skierbiszewski C., Siekacz M., Turski H., Muzioł G., Sawicka M., Feduniewicz-Żmuda A. et. al. // Applied Physics Express. 2012. Vol. 5, Issue 2. P. 022104. doi: 10.1143/apex.5.022104 

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy / Liao Y., Thomidis C., Kao C., Moustakas T. D. // Applied Physics Letters. 2011. Vol. 98, Issue 8. P. 081110. doi: 10.1063/1.3559842 

Investigation of thermometrical characteristics of p+-n-GaP diodes / Krasnov V. A., Shwarts Yu. M., Shwarts M. M., Kopko D. P., Erohin S. Yu., Fonkich A. M. et. al. // Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2008. Vol. 6, Issue 78. P. 38–40.

Diodes based on epitaxial gallium phosphide for high temperature thermometry / Yerochin S. Yu., Krasnov V. A., Shwarts Yu. M., Shutov S. V. // Journal of Radio Electronics. 2007. Issue 11. URL: http://jre.cplire.ru/jre/nov07/2/text.html

Metrologicheskoe obespechenie diodnoy termometrii / Shvarc Yu. M., Ivashchenko A. N., Shvarc M. M., Kopko D. P., Kartashev V. I., Lucenko N. D. // Pribory. 2007. Issue 8 (86). P. 5–11.

Erohin S. Yu., Krasnov V. A., Shvarc Yu. M. Termometricheskie harakteristiki diodov na osnove GaAs i tverdyh rastvorov AlGaAs // Zbirnyk tez konferentsiyi molodykh vchenykh z fizyky napivprovidnykiv “Lashkarovski chytannia – 2011”. Kyiv, 2011. P. 170–172.

Termochuvstvitel'nye ehlementy vysokotemperaturnyh diodnyh datchikov temperatury na osnove tverdyh rastvorov AlGaAs / Erohin S. Yu., Krasnov V. A., Fonkich A. M., Shvarc Yu. M., Shutov S. V. // Materialy I Mizhnarodnoi naukovo-praktychnoi konferentsiyi “Aktualni problemy prykladnoi fizyky”. Sevastopol, 2012. P. 143–144.

Krasnov V. O., Yerokhin S. Yu. Sposib vyznachennia efektyvnoi kontsentratsiyi osnovnykh nosiyiv zariadu v bazi shyrokozonnoho dioda: Pat. No. 47826 UA. MPK H01L 21/66, G01N27/22 / Vlasnyk patentu KhNTU, IFP im. V. Ye. Lashkarova NANU. No. u 200909097; declareted: 03.09.2009; published: 25.02.2010, Bul. No. 4. 4 p.

Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics / Krasnov V. A., Shutov S. V., Shwarts Y. M., Yerochin S. Y. // Review of Scientific Instruments. 2011. Vol. 82, Issue 8. P. 086109. doi: 10.1063/1.3626902 

Adirovich E. I., Karageorgiy-Alkalaev P. M., Leyderman A. Yu. Toki dvoynoy inzhekcii v poluprovodnikah. Moscow: Sovetskoe radio, 1979. 320 p.



DOI: https://doi.org/10.15587/1729-4061.2018.133811

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Copyright (c) 2018 Vasily Krasnov, Sergey Yerochin, Oleksii Demenskyi, Gennadii Krapyvko

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ISSN (print) 1729-3774, ISSN (on-line) 1729-4061