Specific features of defect formation in the n­Si <P> single crystals at electron irradiation

Authors

DOI:

https://doi.org/10.15587/1729-4061.2018.150959

Keywords:

silicon single crystals, infrared Fourier spectroscopy, Hall effect, uniaxial pressure, radiation defects, deep energy levels

Abstract

Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si <P>, irradiated by different fluxes of electrons with an energy of 12 MeV. It is shown that for the examined silicon single crystals at electronic irradiation, it is quite effective to form a new type of radiation defects belonging to the VOiP complexes (A-center, modified with an additive of phosphorus). Based on the solutions to electroneutrality equation, we have derived dependences of activation energy for the deep level E1=EC–0,107 eV, which belongs to the VOiP complex, on uniaxial pressure along the crystallographic directions [100] and [111]. By using a method of least squares, we have constructed approximation polynomials for calculating these dependences. At orientation of the deformation axis along the crystallographic direction [100], the deep level E1=EC–0.107 eV will be decomposed into two components with a different activation energy. This explains the nonlinear dependences of activation energy of the deep level E1=EC–0.107 eV on the uniaxial pressure P≤0.4 GPa. For pressures P>0.4 GPa, the decomposition of this deep level is significant and one can assume that the deep level of the VOiP complex will interact only with two minima in the silicon conduction zone while a change in the magnitude of activation energy would be linear for deformation. For the case of uniaxial pressure P≤0.4 GPa along the crystallographic direction [111] a change in the activation energy for the VOiP complex is described by a quadratic dependence. Accordingly, the offset in the deep level E1=EC–0.107 eV for a given case is also a quadratic function for deformation. Different dependences of activation energy of the VOiP complex on the orientation of a deformation axis relative to different crystallographic directions may indicate the anisotropic characteristics of this defect. The established features in defect formation for the n-Si <P> single crystals, irradiated by electrons, could be applied when designing various instruments for functional electronics based on these single crystals

Author Biographies

Sergiy Luniov, Lutsk National Technical University Lvivska str., 75, Lutsk, Ukraine, 43018

PhD, Associate Professor

Department of Basic Sciences

Andriy Zimych, Lutsk National Technical University Lvivska str., 75, Lutsk, Ukraine, 43018

Junior Researcher

Department of Basic Sciences

Mykola Khvyshchun, Lutsk National Technical University Lvivska str., 75, Lutsk, Ukraine, 43018

PhD, Associate Professor

Department of Electronic and Telecommunication

Mykola Yevsiuk, Lutsk National Technical University Lvivska str., 75, Lutsk, Ukraine, 43018

PhD, Associate Professor

Department of Electronics and Telecommunications

Volodymyr Maslyuk, Institute of Electron Physics of the National Academy of Sciences of Ukraine Universitetska str., 21, Uzhhorod, Ukraine, 88017

Doctor of Physical and Mathematical Sciences, Professor, Head of Department

Department of Photonuclear Processes

References

  1. Sun, Y., Chmielewski, A. G. (2017). Applications of Ionizing Radiation in Materials Processing. Warszawa: Institute of Nuclear Chemistry and Technology, 244.
  2. Quanfeng, L., Huiyong, Y., Taibin, D., Peiqing, W. (2001). Irradiation of semiconductor devices using a 10 MeV travelling wave electron linear accelerator. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 174 (1-2), 194–198. doi: https://doi.org/10.1016/s0168-583x(00)00438-9
  3. Fuochi, P. G. (1994). Irradiation of power semiconductor devices by high energy electrons: The Italian experience. Radiation Physics and Chemistry, 44 (4), 431–440. doi: https://doi.org/10.1016/0969-806x(94)90084-1
  4. Fuochi, P. G., Corda, U., Gombia, E., Lavalle, M. (2006). Influence of radiation energy on the response of a bipolar power transistor tested as dosimeter in radiation processing. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 564 (1), 521–524. doi: https://doi.org/10.1016/j.nima.2006.03.019
  5. Gradoboev, A. V., Simonova, A. V. (2017). Radiacionnye tekhnologii v proizvodstve poluprovodnikovyh priborov. Fiziko-tekhnicheskie problemy v nauke, promyshlennosti i medicine: sbornik tezisov dokladov IX Mezhdunarodnoy nauchno-prakticheskoy konferencii. Tomsk, 69.
  6. Nalwa, H. S. (2001). Silicon-Based Materials and Devices. San Diego: Academic Press, 609.
  7. Siffert, P., Krimmel, E. (2004). Silicon. Springer-Verlag, 550. doi: https://doi.org/10.1007/978-3-662-09897-4
  8. Fumio, S. (2012). Semiconductor Silicon Crystal Technology. Elsevier Science & Technology, 406.
  9. Hroza, A. A., Lytovchenko, P. H., Starchyk, M. I. (2006). Efekty radiatsiyi v infrachervonomu pohlynanni ta strukturi kremniyu. Kyiv: Naukova dumka, 124.
  10. Bogaerts, W., Selvaraja, S. K., Dumon, P., Brouckaert, J., De Vos, K., Van Thourhout, D., Baets, R. (2010). Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology. IEEE Journal of Selected Topics in Quantum Electronics, 16 (1), 33–44. doi: https://doi.org/10.1109/jstqe.2009.2039680
  11. Tyszka, K., Moraru, D., Samanta, A., Mizuno, T., Jabłoński, R., Tabe, M. (2015). Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy. Journal of Applied Physics, 117 (24), 244307. doi: https://doi.org/10.1063/1.4923229
  12. Samanta, A., Muruganathan, M., Hori, M., Ono, Y., Mizuta, H., Tabe, M., Moraru, D. (2017). Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors. Applied Physics Letters, 110 (9), 093107. doi: https://doi.org/10.1063/1.4977836
  13. Dolgolenko, A. P. (2013). Modification of radiation defects in Si and Ge by background impurity. Nuclear Physics and Atomic Energy, 14 (4), 377–383.
  14. Gaidar, G. P. (2011). The kinetic of point defect transformation during the annealing process in electron-irradiated silicon. Semiconductor Physics Quantum Electronics and Optoelectronics, 14 (2), 213–221. doi: https://doi.org/10.15407/spqeo14.02.213
  15. Voronkov, V. V., Falster, R., Londos, C. A., Sgourou, E. N., Andrianakis, A., Ohyama, H. (2011). Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities. Journal of Applied Physics, 110 (9), 093510. doi: https://doi.org/10.1063/1.3657946
  16. Musaev, A. M. (2013). Peculiarities of changes in electrical properties of the silicon p+–n–n+-structures irradiated with electrons. Uspekhi prikladnoy fiziki, 1 (2), 147–150.
  17. Yarykin, N., Weber, J. (2013). Metastable CuVO* Complex in Silicon. Solid State Phenomena, 205-206, 255–259. doi: https://doi.org/10.4028/www.scientific.net/ssp.205-206.255
  18. Markevich, V. P., Peaker, A. R., Hamilton, B., Lastovskii, S. B., Murin, L. I., Coutinho, J. et. al. (2013). The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon. Solid State Phenomena, 205-206, 181–190. doi: https://doi.org/10.4028/www.scientific.net/ssp.205-206.181
  19. Christopoulos, S.-R. G., Sgourou, E. N., Angeletos, T., Vovk, R. V., Chroneos, A., Londos, C. A. (2017). The CiOi(SiI)2 defect in silicon: density functional theory calculations. Journal of Materials Science: Materials in Electronics, 28 (14), 10295–10297. doi: https://doi.org/10.1007/s10854-017-6797-6
  20. Joita, A. C., Nistor, S. V. (2018). Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons. Journal of Applied Physics, 123 (16), 161531. doi: https://doi.org/10.1063/1.4998518
  21. Radu, R., Pintilie, I., Makarenko, L. F., Fretwurst, E., Lindstroem, G. (2018). Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons. Journal of Applied Physics, 123 (16), 161402. doi: https://doi.org/10.1063/1.5011372
  22. Radu, R., Pintilie, I., Nistor, L. C., Fretwurst, E., Lindstroem, G., Makarenko, L. F. (2015). Investigation of point and extended defects in electron irradiated silicon – Dependence on the particle energy. Journal of Applied Physics, 117 (16), 164503. doi: https://doi.org/10.1063/1.4918924
  23. Dolgolenko, A. P. (2016). Role of interstitial silicon atoms in the configuration restructuring divacancies in the defect clusters. Voprosy atomnoy nauki i tekhniki, 2, 3–9.
  24. Sgourou, E. N., Angeletos, T., Chroneos, A., Londos, C. A. (2015). Infrared study of defects in nitrogen-doped electron irradiated silicon. Journal of Materials Science: Materials in Electronics, 27 (2), 2054–2061. doi: https://doi.org/10.1007/s10854-015-3991-2
  25. Pizzini, S. (2017). Point Defects in Group IV Semiconductors. Materials Research Forum LLC, 10. doi: https://doi.org/10.21741/9781945291234
  26. Murin, L. I., Markevich, V. P., Hallberg, T., Lindström, J. L. (1999). New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon. Solid State Phenomena, 69-70, 309–314. doi: https://doi.org/10.4028/www.scientific.net/ssp.69-70.309
  27. Trombetta, J. M., Watkins, G. D. (1987). Identification of an interstitial carbon‐interstitial oxygen complex in silicon. Applied Physics Letters, 51 (14), 1103–1105. doi: https://doi.org/10.1063/1.98754
  28. Watkins, G. D., Brower, K. L. (1976). EPR Observation of the Isolated Interstitial Carbon Atom in Silicon. Physical Review Letters, 36 (22), 1329–1332. doi: https://doi.org/10.1103/physrevlett.36.1329
  29. Gritsenko, M. I., Kobzar, O. O., Pomozov, Yu. V., Sosnin, M. G., Khirunenko, L. I. (2010). Efficiency of Interaction of Interstitial Carbon with Oxygen, Tin, and Substitution Carbon in Irradiated Silicon. Ukrainskyi fizychnyi zhurnal, 55 (2), 223–228.
  30. Davies, G., Oates, A. S., Newman, R. C., Woolley, R., Lightowlers, E. C., Binns, M. J., Wilkes, J. G. (1986). Carbon-related radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 19 (6), 841–855. doi: https://doi.org/10.1088/0022-3719/19/6/006
  31. Kireev, P. S. (1969). Fizika poluprovodnikov. Moscow: Vysshaya shkola, 590.
  32. Hensel, J. C., Hasegawa, H., Nakayama, M. (1965). Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond. Physical Review, 138 (1A), A225–A238. doi: https://doi.org/10.1103/physrev.138.a225
  33. Polyakova, A. L. (1979). Deformaciya poluprovodnikov i poluprovodnikovyh priborov. Moscow: Nauka, 168.
  34. Luniov, S. V., Panasiuk, L. I., Fedosov, S. A. (2012). Deformation potentia constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect. Ukrainskyi fizychnyi zhurnal, 57 (6), 637–642.
  35. Fedosov, A. V., Lunov, S. V., Fedosov, S. A. (2011). Vplyv odnovisnoi deformatsiyi na zapovnennia rivnia, poviazanoho z A-tsentrom, u krystalakh n-Si. Ukrainskyi fizychnyi zhurnal, 56 (1), 70–74.
  36. Fedosov, A. V., Lunov, S. V., Fedosov, S. A. (2010). Osoblyvosti piezooporu -oprominenykh krystaliv u vypadku symetrychnoho rozmishchennia osi deformatsiyi vidnosno vsikh izoenerhetychnykh elipsoidiv. Ukrainskyi fizychnyi zhurnal, 55 (3), 322–325.

Downloads

Published

2018-12-13

How to Cite

Luniov, S., Zimych, A., Khvyshchun, M., Yevsiuk, M., & Maslyuk, V. (2018). Specific features of defect formation in the n­Si &lt;P&gt; single crystals at electron irradiation. Eastern-European Journal of Enterprise Technologies, 6(12 (96), 35–42. https://doi.org/10.15587/1729-4061.2018.150959

Issue

Vol. 6 No. 12 (96) (2018): Materials Science

Section

Materials Science

License

Copyright (c) 2018 Sergiy Luniov, Andriy Zimych, Mykola Khvyshchun, Mykola Yevsiuk, Volodymyr Maslyuk

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.