Thermal microelectromechanical sensor construction

Egor Kiselev, Tetyana Krytska, Nina Stroiteleva, Konstantin Turyshev


The problem of constructing a thermal sensor based on the technology of microelectromechanical systems is solved by structural and circuit integration of capacitance-dependent and thermomechanical parts. For this, the use of a MOS transistor (capacitance-dependent part) with a gate in the form of a bimorph membrane (thermomechanical part), which performs cyclic oscillations under the influence of heating from a sensitive element and subsequent cooling, is proposed. The novelty of the proposed sensor is the provision of a frequency-dependent output signal without the use of additional generator circuits. This makes it easier to combine the sensor with digital signal processing systems and reduce the influence of transmission lines on measurement accuracy. Also, the advantages of the sensor include reduced overall dimensions, which is achieved due to the vertical integration of its elements.

Model studies of the sensor are carried out and on their basis circuit and software-hardware solutions for determining the temperature of the sensitive element are proposed. It is shown that the use of logarithmic dependence to approximate the influence of the temperature of the sensitive element on the output pulse frequency of the sensor minimizes the measurement error to 3.08 %. The composition of the information and measurement system, which contains a thermal sensor, a sensor signal pre-processing circuit and measurement processing unit using the Atmega328 microcontroller on the platform of the unified ArduinoUno module, is determined. It is shown that the total error of temperature determination in the developed system does not exceed 4.18 % in the temperature range of the sensor element from 20 °C to 47 °C.

The program code for the microcontroller part of the information and measurement system is developed, which occupies 12 % of the program memory and 4.9 % of the dynamic memory of the unified module.

The proposed thermal microelectromechanical sensor can be used for contact measurement of the temperature of gaseous and liquid media, recording of optical radiation and microwave signals


MOS transistor; bimorph membrane; sensitive element; pulse frequency; microcontroller

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Sizov, F. (2015). IR-photoelectronics: photon or thermal detectors? Outlooks. Sensor Electronics and Microsystem Technologies, 12 (1), 26–52. doi:

Mishra, M. K., Dubey, V., Mishra, P. M., Khan, I. (2019). MEMS Technology: A Review. Journal of Engineering Research and Reports, 1–24. doi:

Guo, Z., Zhang, T., Zhou, F., Yu, F. (2019). Design and Experiments for a Kind of Capacitive Type Sensor Measuring Air Flow and Pressure Differential. IEEE Access, 7, 108980–108989. doi:

Polak, L., Sotner, R., Petrzela, J., Jerabek, J. (2018). CMOS Current Feedback Operational Amplifier-Based Relaxation Generator for Capacity to Voltage Sensor Interface. Sensors, 18 (12), 4488. doi:

Wang, Y., Chodavarapu, V. (2015). Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors. Sensors, 15 (2), 4253–4263. doi:

Deng, F., He, Y., Li, B., Zuo, L., Wu, X., Fu, Z. (2015). A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications. Sensors, 15 (3), 6872–6884. doi:

Yang, X., Wang, Y., Qing, X. (2018). A Flexible Capacitive Pressure Sensor Based on Ionic Liquid. Sensors, 18 (7), 2395. doi:

Ghadim, M. A., Mailah, M., Mohammadi-Alasti, B., Ghadim, M. A. (2013). Simulation of MEMS Capacitive Thermal Sensor Based on Tip Deflection of a Functionally Graded Micro-Beam. Advanced Materials Research, 845, 340–344. doi:

Maiolo, L., Maita, F., Pecora, A., Rapisarda, M., Mariucci, L., Benwadih, M. et. al. (2012). Flexible PVDF-TrFE Pyroelectric Sensor Integrated on a Fully Printed P-channel Organic Transistor. Procedia Engineering, 47, 526–529. doi:

Dahiya, R. S., Adami, A., Collini, C., Lorenzelli, L. (2013). POSFET tactile sensing arrays using CMOS technology. Sensors and Actuators A: Physical, 202, 226–232. doi:

Rahman, A., Panchal, K., Kumar, S. (2011). Optical sensor for temperature measurement using bimetallic concept. Optical Fiber Technology, 17 (4), 315–320. doi:

Kiselov, Ye. M., Taranets, A. V., Stroitielieva, N. I. (2018). Pat. No. 132133 UA. Mikroelektronnyi termoiemnisnyi vymiriuvalnyi peretvoriuvach. No. u 2018 09447; declareted: 19.09.2018; published: 11.02.2019, Bul. No. 3. Available at:

Pajer, R., Milanoviĉ, M., Premzel, B., Rodiĉ, M. (2015). MOS-FET as a Current Sensor in Power Electronics Converters. Sensors, 15 (8), 18061–18079. doi:

Peerapur, V. M., Nandi, A. V. (2018). Pull-in Voltage of Bimorph Cantilever Based MEMS Switch Using COMSOL Multiphysics. 2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET). doi:

Báez-López, D., Guerrero-Castro, F. E. (2011). Circuit Analysis with Multisim. Synthesis Lectures on Digital Circuits and Systems, 6 (3), 1–198. doi:

Tang, X., Wang, X., Cattley, R., Gu, F., Ball, A. (2018). Energy Harvesting Technologies for Achieving Self-Powered Wireless Sensor Networks in Machine Condition Monitoring: A Review. Sensors, 18 (12), 4113. doi:

Percy, S., Knight, C., McGarry, S., Post, A., Moore, T., Cavanagh, K. (2014). Thermal Energy Harvesting for Application at MEMS Scale. SpringerBriefs in Electrical and Computer Engineering. doi:

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Copyright (c) 2019 Egor Kiselev, Tetyana Krytska, Nina Stroiteleva, Konstantin Turyshev

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ISSN (print) 1729-3774, ISSN (on-line) 1729-4061