Measurement of characteristics of organic transistor structures
Keywords:semiconductor layer, the organic transistor structure, measuring system
The system for measuring parameters of organic transistor structures was proposed and developed in the paper. Circuit diagram was simulated in the software environment Proteus. Output and transfer current-voltage characteristics of organic transistor structures were studied.To develop a measuring system, modern elements of electronic equipment were used. Current-voltage characteristics, which show the work of organic transistor structures were shown, such as output and transfer characteristics, that is the dependence of the drain-source current (Ids) on the drain-source voltage (Vds) and gate voltage (Vg). The studies at different gate voltages Vg = 0÷100V with the interval 10V were conducted. It is shown that at the increase in the gate voltage, the drain-source current (Ids) increased within about 0.2 mA÷0.1 mA. This allows to use organic FETs both in display panels and in the smart cards since in the display panels transistors are used for color control and in smart cards - for improving information transfer. (This should remain so.)
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Copyright (c) 2014 Наталія Іванівна Кус, Зенон Юрійович Готра, Владислав Володимирович Черпак, Павло Йосипович Стахіра, Григорій Іванович Барило
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