Modeling the dynamic properties of iii-nitrides in strong electric fields

Authors

DOI:

https://doi.org/10.15587/1729-4061.2021.225733

Keywords:

III-nitrides, dispersion mechanisms, relaxation, ballistic transport, dynamic characteristics, limit frequency

Abstract

This paper proposes a method of modeling the dynamic properties of multi-valley semiconductors. The model is applied to the relevant materials GaN, AlN, and InN, which are now known by the general name of III-nitrides. The method is distinguished by economical use of computational resources without significant loss of accuracy and the possibility of application for both dynamic time-dependent tasks and the fields variable in space.

The proposed approach is based on solving a system of differential equations, which are known as relaxation ones, and derived from the Boltzmann kinetic equation in the approximation of relaxation time by the function of distribution over k-space. Unlike the conventional system of equations for the concentration of carriers, their pulse and energy, we have used, instead of the energy relaxation equation, an equation of electronic temperature as a measure of the energy of the chaotic motion only. Relaxation times are defined not as integral values from the static characteristics of the material but the averaging of quantum-mechanic speeds for certain types of scattering is used. Averaging was carried out according to the Maxwellian distribution function in the approximation of electronic temperature, as a result of which various mechanisms of dispersion of carriers are taken into consideration through specific relaxation times. The system of equations includes equations in partial derivatives from time and coordinates, which makes it possible to investigate the pulse properties of the examined materials. In particular, the dynamic effect of the "overshoot" in drift velocity and a spatial "ballistic transport" of carriers.

The use of Fourier transforms of pulse dependence of the drift carrier velocity to calculate maximum conductivity frequencies is considered. It has been shown that the limit frequencies are hundreds of gigahertz and, for aluminum nitride, exceed a thousand gigahertz

Author Biographies

Kostyantyn Kulikov , National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

Department of Electronic Engineering

Vladimir Moskaliuk , National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

PhD, Professor

Department of Electronic Engineering

Vladimir Timofeyev, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

Doctor of Technical Sciences, Professor, Head of Department

Department of Electronic Engineering

References

  1. Siddiqua, P., Wang, Y., Shur, M. S., O’Leary, S. K. (2019). Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility. Solid State Communications, 299, 113658. doi: https://doi.org/10.1016/j.ssc.2019.113658
  2. Smolin, V. K. (2016). High-Frequency Microelectronics Based on Silicon Substrate Structures. Journal of Nano and Microsystem Technique,, 18 (11), 713–717. Available at: http://www.microsystems.ru/files/full/mc201611.pdf
  3. Encomendero, J., Jena, D., Xing, H. G. (2019). Resonant Tunneling Transport in Polar III-Nitride Heterostructures. High-Frequency GaN Electronic Devices, 215–247. doi: https://doi.org/10.1007/978-3-030-20208-8_8
  4. Guo, W., Zhang, M., Bhattacharya, P., Heo, J. (2011). Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics. Nano Letters, 11 (4), 1434–1438. doi: https://doi.org/10.1021/nl103649d
  5. Arafin, S., Liu, X., Mi, Z. (2013). Review of recent progress of III-nitride nanowire lasers. Journal of Nanophotonics, 7 (1), 074599. doi: https://doi.org/10.1117/1.jnp.7.074599
  6. Saxena, D., Mokkapati, S., Jagadish, C. (2012). Semiconductor Nanolasers. IEEE Photonics Journal, 4 (2), 582–585. doi: https://doi.org/10.1109/jphot.2012.2189201
  7. Maekawa, T., Kanaya, H., Suzuki, S., Asada, M. (2016). Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss. Applied Physics Express, 9 (2), 024101. doi: https://doi.org/10.7567/apex.9.024101
  8. Oshima, N., Hashimoto, K., Suzuki, S., Asada, M. (2016). Wireless data transmission of 34 Gbit/s at a 500‐GHz range using resonant‐tunnelling‐diode terahertz oscillator. Electronics Letters, 52 (22), 1897–1898. doi: https://doi.org/10.1049/el.2016.3120
  9. Asada, M., Suzuki, S. (2016). Room-Temperature Oscillation of Resonant Tunneling Diodes close to 2 THz and Their Functions for Various Applications. Journal of Infrared, Millimeter, and Terahertz Waves, 37 (12), 1185–1198. doi: https://doi.org/10.1007/s10762-016-0321-6
  10. Shur, M. S. (1987). GaAs devices and circuits. Springer, 670. doi: https://doi.org/10.1007/978-1-4899-1989-2
  11. Foutz, B. E., O’Leary, S. K., Shur, M. S., Eastman, L. F. (1999). Transient electron transport in wurtzite GaN, InN, and AlN. Journal of Applied Physics, 85 (11), 7727–7734. doi: https://doi.org/10.1063/1.370577
  12. Feng, Z. C. (2006). III-Nitride Semiconductor Materials. World Scientific Publishing Co., 440. doi: https://doi.org/10.1142/p437
  13. Ohta, H., Okamoto, K. (2009). Nonpolar/Semipolar GaN Technology for Violet, Blue, and Green Laser Diodes. MRS Bulletin, 34 (5), 324–327. doi: https://doi.org/10.1557/mrs2009.94
  14. Hockney, R. W., Eastwood, J. W. (1988). Computer simulation using particles. CRC Press, 540.
  15. Moskalyuk, V. A., Timofeev, V. I., Fedyay, A. V. (2014). Bystrodeystvuyuschie pribory elektroniki. Ch. 1. LAP LAMBERT Academic Publishing, 240.
  16. Adachi, S. (2009). Properties of Semiconductor Alloys: Group‐IV, III–V and II–VI Semiconductors. John Wiley & Sons, Ltd. doi: https://doi.org/10.1002/9780470744383
  17. Bokula, O., Prohorov, E. (2011). Chastotnye svoystva mezhdolinnogo perenosa v nitride galliya. Tehnika i pribory SVCh, 1, 24–28.
  18. Seeger, K. (1973). Semiconductor Physics. Springer, 514. doi: https://doi.org/10.1007/978-3-7091-4111-3
  19. Kulikov, K., Baida, I., Moskaliuk, V., Timofeyev, V. (2018). Conductance Cutoff of A3B5 Nitrides at High-Frequency Region. 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO). doi: https://doi.org/10.1109/elnano.2018.8477497
  20. Kulikov, K. V., Moskaliuk, V. O., Tymofieiev, V. I. (2019). High-Frequency Properties of GaN, AlN and InN in Strong Fields. Microsystems, Electronics and Acoustics, 24 (3), 20–32. doi: https://doi.org/10.20535/2523-4455.2019.24.3.178841
  21. Asif Khan, M., Kuznia, J. N., Bhattarai, A. R., Olson, D. T. (1993). Metal semiconductor field effect transistor based on single crystal GaN. Applied Physics Letters, 62 (15), 1786–1787. doi: https://doi.org/10.1063/1.109549
  22. Moskalyuk, V. A., Kulikov, K. V. (2009). Chastotnye svoystva nitrida galliya v sil'nom elektricheskom pole. Visnyk Derzhavnoho universytetu informatsiyno-komunikatsiynykh tekhnolohiy, 7 (3), 306–309.
  23. Prohorov, E. D., Beletskiy, N. I. (1982). Poluprovodnikovye materialy dlya priborov s mezhdolinnym perenosom. Kharkiv: Vyscha shkola, 144.
  24. Botsula, O. V. (2010). Chastotnye svoystva mezhdolinnogo perenosa elektronov v ALN. Visnyk Kharkivskoho natsionalnoho universytetu imeni V.N. Karazina. Seriya: Radiofizyka ta elektronika, 927 (16), 7–10. Available at: http://ekhnuir.univer.kharkov.ua/bitstream/123456789/7172/2/927-4.pdf
  25. Botsula, O. V. (2010). Chastotnye svoystva mezhdolinnogo perenosa elektronov v InN. Visnyk Kharkivskoho natsionalnoho universytetu imeni V.N. Karazina. Seriya: Radiofizyka ta elektronika, 942 (17), 67–70. Available at: http://dspace.univer.kharkov.ua/bitstream/123456789/7206/2/942-10.pdf
  26. Kulikov, K., Moskaliuk, V., Timofeev, V. (2017). High-frequency conductance cutoff of gallium nitride. 2017 ІЕЕЕ International conference of information-telecommunication technologies and radio electronics (UkrMiCo’2017), 317–319.
  27. Bonch-Bruevich, V. L., Kalashnikov, S. G. (1990). Fizika poluprovodnikov. Moscow: Nauka, 688.
  28. Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics, 89 (11), 5815–5875. doi: https://doi.org/10.1063/1.1368156
  29. Vurgaftman, I., Meyer, J. R. (2003). Band parameters for nitrogen-containing semiconductors. Journal of Applied Physics, 94 (6), 3675–3696. doi: https://doi.org/10.1063/1.1600519
  30. Kasap, S., Capper, P. (Eds.) (2017). Springer Handbook of Electronic and Photonic Materials. Springer, 1536. doi: https://doi.org/10.1007/978-3-319-48933-9
  31. Ivaschenko, V. M., Mitin, V. V. (1990). Modelirovanie kineticheskih yavleniy v poluprovodnikah. Kyiv: Naukova dumka, 192.
  32. Matulenis, A., Pozhela, Yu., Reklaytis, A. (1978). Dinamika razogreva elektronov. V kn. Mnogodolinnye poluprovodniki. Vil'nyus, 204.
  33. Moskaliuk, V. O. (2004). Fizyka elektronnykh protsesiv. Dynamichni protsesy. Kyiv: IVTs Vyd. «Politekhnika», 180.
  34. Danilin, V., Zhukova, T. (2005). Tranzistory na GaN poka samiy krepkiy oreshek. Elektronika: nauka, tehnologii, biznes, 26 (4), 20–28.

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Published

2021-02-26

How to Cite

Kulikov , K., Moskaliuk , V., & Timofeyev, V. (2021). Modeling the dynamic properties of iii-nitrides in strong electric fields . Eastern-European Journal of Enterprise Technologies, 1(5 (109), 37–52. https://doi.org/10.15587/1729-4061.2021.225733

Issue

Vol. 1 No. 5 (109) (2021): Applied physics

Section

Applied physics

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Copyright (c) 2021 Константин Вячеславович Куликов , Владимир Александрович Москалюк , Владимир Иванович Тимофеев

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