Crystalquasichemical model of point defects in mercury telluride

Authors

  • Анжела Миколаївна Дмитрів Ivano-Frankivsk National Medical University str. Galician, 124 and, Ivano-Frankivsk, Ukraine, 76008, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2012.4634

Keywords:

mercury tellurium, point defects, vacancies, crystalquasichemistry.

Abstract

One of the most important problems of chemistry of solids and chemical engineering are the analysis of point defects influence on the properties of semiconductors and directed control of their modes and concentration. A great number of monographs, reviews and international conferences are devoted to this subject area. As to HgTe, while studying damage processes, quasichemical models with various combinations of point defects appeared to be the most effective. Alongside, the involvement of the new crystalquasichemical method to the analysis of defective subsystem of stoichiometric as well as non-stoichiometric crystals makes it possible to examine the actual nature of point defects. This is the foundation for the research of solid solution mechanism. The crystalquasichemical method concerning the research of defective subsystem of HgTe was used in the paper. It gives an opportunity to analyze crystalchemical compatibility or incompatibility of defects formation and to calculate the concentration of point defects and current carriers, taking into consideration the deflection from stoichiometry and the part of ionic bond of atoms in crystals. It was determined that within the limits of homogeneity the vacancies V2+Te and interstitial mercury atom Hg2+i dominating in n-HgTe for the n-type material, and the mercury vacancies V-Hg, V2-Hg for the p-type material.Changing HgTe crystal structure (within the limits of homogenity) it is possible to control their properties, in particular value of band gap, electrical, optical and magnetic characteristic.

Author Biography

Анжела Миколаївна Дмитрів, Ivano-Frankivsk National Medical University str. Galician, 124 and, Ivano-Frankivsk, Ukraine, 76008

PhD, Associate Professor

Department of Chemistry

References

  1. Глазов, В. М. Границы насыщения твердых растворов компонентов в теллуриде ртути [Текст] / В. М. Глазов, Л. М. Павлова // Неорганические материалы. – 1994. – Т. 30, №5. – С. 635–638.
  2. Глазов, В. М. Область гомогенности на основе теллурида кадмия в системе кадмий-теллур [Текст] / В. М. Глазов, Л. М. Павлова // Неорганические материалы. – 1994. – Т. 30, №5. – С. 629–634.
  3. Фреїк, Д. М. Атомні дефекти та їх компенсація у чистому і легованому телуриді кадмію [Текст] / Д. М. Фреїк, В. В. Прокопів, У. М. Писклинець // Фізика і хімія твердого тіла. – 2003. – Т.4, №3. – С. 547–555.
  4. Дмитрів, А. М. Точкові дефекти та їх компенсація у меркурій телуриді [Текст] / А. М. Дмитрів // Фізика і хімія твердого тіла. – 2005. – Т. 6, № 2.– С. 287–294.
  5. Родо, Ю. Исследование фазового равновесия в теллуриде ртути [Текст] / Ю. Родо // Полупроводники с узкой запрещенной зоной и их применение. М.: Мир, 1969. – С. 19–33.
  6. Лисняк, С. С. Кристаллохимическая модель исследований в химии твердого тела [Текст] / С. С. Лисняк // Неорганические материалы. – 1992. – Т. 29, №9. – С. 1913–1917.
  7. Крегер, Ф. Химия несовершенных кристаллов [Текст] / Ф. Крегер . – М.: Мир, 1969. – 654 с.

Downloads

Published

2012-10-09

How to Cite

Дмитрів, А. М. (2012). Crystalquasichemical model of point defects in mercury telluride. Eastern-European Journal of Enterprise Technologies, 5(10(59), 14–16. https://doi.org/10.15587/1729-4061.2012.4634

Issue

Vol. 5 No. 10(59) (2012): Materials technology

Section

Materials Science

License

Copyright (c) 2014 Анжела Миколаївна Дмитрів

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.