Role of boron in formation of secondary radiation defects in silicon

Authors

DOI:

https://doi.org/10.15587/1729-4061.2015.47224

Keywords:

silicon, boron-dopant, radiation defects and complexes

Abstract

Influence of boron impurities on electron-transport in crystalline silicon is well known because p-Si – basic semiconducting material of the modern microelectronics – usually is obtained by doping with B. It is too important to understand the mechanism interaction of B dopants with radiation defects in silicon to (i) develop effective radiation treatment technologies for electronic devices and integrated circuits, (ii) improve their radiation resistance, and (iii) design effective solid-state radiation sensors and detectors.

Based on authors’ previous works the role of B-impurities in formation of secondary radiation defects in Si crystals is investigated. Dependences of these processes on isochronous annealing temperature (80–600 °C) are studied by using the Hall measurements of temperature-dependencies (100–300 K) of holes’ concentration and mobility in silicon before and after irradiation with 8 MeV electrons at the dose of 5∙1015 cm–2. Two main conclusions are made: boron atoms in silicon crystals (i) serve as extremely active sinks of radiation defects, and (ii) participate in space-charge-screening of the relatively high-conductive inclusions in form of clusters of radiation defects.

Author Biographies

Temur Pagava, Georgian Technical University Kostava 77, Tbilisi, Georgia, 0175

Professor, Doctor of Physical-Mathematical Sciences

Department of Engineering Physics

Levan Chkhartishvili, Georgian Technical University Kostava Ave. 77, Tbilisi, Georgia, 0175

Doctor of Physical-Mathematical Sciences, Professor

Department of Engineering Physics

Nodar Maisuradze, Georgian Technical University Kostava 77, Tbilisi, Georgia, 0175

Associate Professor, Candidate of Physical-Mathematical Sciences

Department of Engineering Physics

Ramaz Esiava, Georgian Technical University Kostava 77, Tbilisi, Georgia, 0175

Assistant Professor, Candidate of Technical Sciences

Department of Engineering Physics

Shorena Dekanosidze, Georgian Technical University Kostava 77, Tbilisi, Georgia, 0175

Assistant Professor, Candidate of Technical Sciences

Department of Engineering Physics

Manana Beridze, Georgian Technical University Kostava 77, Tbilisi, Georgia, 0175

Senior Lecturer, Doctor of Philosophy in Engineering Physics

Department of Engineering Physics

Nana Mamisashvili, Georgian Technical University Kostava 77, Tbilisi, Georgia, 0175

Assistant Professor, Candidate of Technical Sciences

Department of Engineering Physics

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Published

2015-08-22

How to Cite

Pagava, T., Chkhartishvili, L., Maisuradze, N., Esiava, R., Dekanosidze, S., Beridze, M., & Mamisashvili, N. (2015). Role of boron in formation of secondary radiation defects in silicon. Eastern-European Journal of Enterprise Technologies, 4(5(76), 52–58. https://doi.org/10.15587/1729-4061.2015.47224

Issue

Vol. 4 No. 5(76) (2015): Applied physics. Materials Science

Section

Materials Science

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Copyright (c) 2015 Levan Chkhartishvili, Temur Pagava, Nodar Maisuradze, Ramaz Esiava, Shorena Dekanosidze, Manana Beridze, Nana Mamisashvili

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