Methods of computer tools development for measuring and analysis of electrical properties of semiconductor films
DOI:
https://doi.org/10.15587/1729-4061.2020.195253Keywords:
computer tools, automation, minimization algorithms, contacts, electrical propertiesAbstract
The method is presented and computer tools of automated measurement of electrical parameters and experimental data processing are developed, taking into account models for describing physical processes that determine the operating characteristics of semiconductor material. The possibility of automated investigation of the quality and ohmicity of contacts is realized, which significantly improves the reliability of the data obtained.
Methods and features of software processing of automated research results are considered using the models that allow taking into account the effect of surface, structure and thickness of the sample on the electrical properties of semiconductor films.
Experimental studies of a series of n-PbTe thin films are carried out and the efficiency of the developed tools and methods of processing scientific data using the described methods of experimental data analysis is shown. Based on the simulation, the electrical parameters of the surface layers were determined and the effect of the surface and grain boundary mechanisms of charge carrier scattering on the electrical parameters of the films was separated. The surface mobility of the charge carriers is approximately 3 times less than the mobility in the bulk material, which indicates the dominance of the diffuse scattering of charge carriers on the surface of the thin-film samples despite the high reflectance coefficient (0.4). Taking into account the effect of the surface and the boundaries of the grains, it is possible to choose the technological modes and duration of spraying to obtain a semiconductor material with the desired properties.
As a result of using the developed tools, it was possible to significantly reduce the complexity of the process of measuring the basic electrical parameters of semiconductor materials, processing the experimental results, to improve the accuracy of the results obtainedReferences
- Jones, R. O., Gunnarsson, O. (1989). The density functional formalism, its applications and prospects. Reviews of Modern Physics, 61 (3), 689–746. doi: https://doi.org/10.1103/revmodphys.61.689
- Naidych, B. P. (2018). Calculation of the Stability and Rebuilding of the Crystal Surface Within DFT-Calculations. Physics and Chemistry of Solid State, 19 (3), 254–257. doi: https://doi.org/10.15330/pcss.19.3.254-257
- Novosyadlyj, S., Dzundza, B., Gryga, V., Novosyadlyj, S., Kotyk, M., Mandzyuk, V. (2017). Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates. Eastern-European Journal of Enterprise Technologies, 3 (5 (87)), 54–61. doi: https://doi.org/10.15587/1729-4061.2017.104563
- Ruvinskii, M. A., Kostyuk, O. B., Dzundza, B. S., Yaremiy, I. P., Mokhnatskyi, M. L. (2017). Kinetic Phenomena and Thermoelectric Properties of Polycrystalline Thin Films Based on PbSnAgTe Compounds. Journal of Nano- and Electronic Physics, 9 (5), 05004-1–05004-6. doi: https://doi.org/10.21272/jnep.9(5).05004
- De Boor, J., Müller, E. (2013). Data analysis for Seebeck coefficient measurements. Review of Scientific Instruments, 84 (6), 065102. doi: https://doi.org/10.1063/1.4807697
- Glinchenko, A. S., Komarov, V. A., Tronin, O. A. (2012 Computer spectral measurements and their applications. Uspehi sovremennoy radioelektroniki, 9, 025–028.
- Iermolenko, Iе. O. (2014). Classification of methods for measuring current-voltage characteristics of semiconductor devices. Tehnologiya i konstruirovanie v elektronnoy apparature, 2-3, 3–11. doi: https://doi.org/10.15222/tkea2014.2-3.03
- Sondheimer, E. H. (1950). The Influence of a Transverse Magnetic Field on the Conductivity of Thin Metallic Films. Physical Review, 80 (3), 401–406. doi: https://doi.org/10.1103/physrev.80.401
- Saliy, Ya. P., Freik, I. M. (2004). Elektrotekhnichna model elektroprovidnosti tonkykh polikrystalichnykh plivok PbTe. Fizyka i khimiya tverdoho tila, 5 (1), 94–95.
- Petritz, R. L. (1958). Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface. Physical Review, 110 (6), 1254–1262. doi: https://doi.org/10.1103/physrev.110.1254
- Kogut, I. T., Holota, V. I., Druzhinin, A., Dovhij, V. V. (2016). The Device-Technological Simulation of Local 3D SOI-Structures. Journal of Nano Research, 39, 228–234. doi: https://doi.org/10.4028/www.scientific.net/jnanor.39.228
- Tsibanov, V. V. Programma minimizatsii funktsii mnogih peremennyh metodom deformiruemogo mnogogrannika (po Nelderu i Midu). doi: http://doi.org/10.13140/RG.2.2.31221.88803
- Ruvinskii, M. A., Kostyuk, O. B., Dzundza, B. S., Makovyshyn, V. I. (2017). The Influence of Surface on Scattering of Carriers and Kinetic Effects in n-PBTE Films. Nanosistemi, Nanomateriali, Nanotehnologii, 15 (2), 277–288. doi: https://doi.org/10.15407/nnn.15.02.0277
- Tellier, C. R., Rabel, M., Tosser, A. J. (1978). Hall coefficient of thin films in a mean free path model. Journal of Physics F: Metal Physics, 8 (11), 2357–2365. doi: https://doi.org/10.1088/0305-4608/8/11/019
- Khokhlov, D. (2003). Lead Chalcogenides: Physics and Applications. Taylor & Frencis.
- Dzundza, B. S. (2018). Automated Hardware-Softw are System for Measurement of Thermoelectric Parameters of Semiconductor Materials. Journal of Thermoelectricity, 5, 5–12.
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2020 Roman Dunets, Bogdan Dzundza, Mykhailo Deichakivskyi, Volodymyr Mandzyuk, Andrii Terletsky, Omelian Poplavskyi
This work is licensed under a Creative Commons Attribution 4.0 International License.
The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.
A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.
