Fabrication and properties of p-n-junctions based on Cd1-x Znx Te

Authors

  • Віктор Васильович Брус Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Марія Іванівна Ілащук Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Богдан Миколайович Грицюк Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Орест Архипович Парфенюк Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Павло Дмитрович Мар’янчук Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19690

Keywords:

CdTe, p-n-junctions, laser, illumination, evaporation, diffusion, recombination, vacancies, current, signal

Abstract

Electrical properties of semiconductor p-n-junctions, fabricated by the illumination of Cd1-x Znx Te crystals by powerful laser pulses, were investigated.

The fabrication of barrier structures was carried out on the base of Cd1-xZnxTe single crystals with n-type of conductivity, grown by the Bridgman method at controllable cadmium vapor pressure.  The region with p-type of conductivity was created by means of a powerful ruby laser (l=0.694 μm, absorption coefficient in CdTe a=     6×104cm-1). 

The prepared structures were established to be abrupt p-n-junctions. Their I-V characteristics are determined by the generation-recombination processes within the space charge region as well as by the recombination at the interface between recrystallized layer and bulk semiconductor.

The C-V characteristics, measured at different frequencies of small amplitude (10 mV) AC signal, provide evidence on the presence of the series resistance and surface states at the interface between recrystallized layer and bulk semiconductor that is in good correlation with the results obtained from the I-V characteristics.

Author Biographies

Віктор Васильович Брус, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Candidate of engineering sciences, Assistant professor

Department of Electronics and Energy Engineering

Марія Іванівна Ілащук, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Candidate of physico-mathematical sciences, Assistant professor

Department of Electronics and Energy Engineering

Богдан Миколайович Грицюк, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Candidate of physico-mathematical sciences, Associate professor

Department of Radiotechnic and Information safety

Орест Архипович Парфенюк, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Doctor, Professor

Department of Electronics and Energy Engineering

Павло Дмитрович Мар’янчук, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Doctor, Professor, Head of the Department

Department of Electronics and Energy Engineering

References

  1. Zanio, K. R. Cadmium telluride [Текст] / K. R. Zanio // Semiconductors and Semimetals. Academic Press, New York, 1978 – V.13. – р. 236
  2. Шкумбатюк, П. С. Формирование барьерных структур при непрерывном лазерном облучении широкозонных материалов АIIBVI [Текст] / П.С. Шкумбатюк // Неорганические материалы. – 1999 – Т.35(№9) – С. 1045-1047.
  3. Medvid, A. Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation [Текст] / A. Medvid, P. Onufrijevs, G.Mozolevs kis, E. Dauksta, R. Rimsa // Nanoskale Research Letter – 2012 – V.7 – P. 428-514.
  4. Huang, Y. Multifunctional characteristics of BaNb0.3Ti0.7O3/Si p-n junctions [Текст] / Y.Huang, K. Zhao, H. Lu, K. Jin, M. He, Z. Chen, Y. Zhou, G. Yang //Appl. Phys. Let. – 2006. – V.88. – P.0619119.
  5. Шульпина, И. Л. Тепловое воздействие импульсного лазерного излучения на реальную структуру монокристаллов CdTe [Текст] / И. Л. Шульпина, Н. К. Зеленина, О. А. Матвеев // ФТТ. – 2000. –Т.42(3) – С. 548-552
  6. Байдулаева, А. Динамика развития поверхностных структур в кристаллах p-CdTe при облучении импульсами лазерного излучения [Текст] / А. Байдулаева, М. Б. Булах, А. И. Власенко, А. В., Ломовцев, П. Е. Мозоль // ФТП.– 2004. – Т.38(1). – С.26-29
  7. Байдулаева, А. Изменение структуры дефектов в монокристаллах p-CdTe при прохождении лазерной ударной волны [Текст]./ А. Байдулаева, А. И. Власенко, Б. Л. Горковенко, А. В. Ломовцев, П. Е. Мозоль // ФТП – 2000 – Т.34(4) – С.443-446.
  8. Зи, С. М. Физика полупроводниковых приборов [Текст] / С. М. Зи – М.: « Энергия », 1973 – 655с.
  9. Бабенцов, В. И. Воздействие лазерного облучения на структурные и рекомбинационные свойства монокристаллического теллурида кадмия [Текст] / В. И. Бабенцов, А. Байдулаева, М.Б. Булах, С.И. Горбань, П.Е. Мозоль // Поверхность. Физика, химия, механика –1988.– вып.12.– С. 144-147.
  10. Матвеев, О. А. Основные принципы послеростового отжига слитка CdTe:Cl для получения полуизолирующих кристаллов [Текст] / О. А. Матвеев, А. И. Терентьев –ФТП.– 2000.–Т. 34(11) – С.1316-1322.
  11. Zanio, K. R. (1978) Cadmium telluride. Semiconductors and Semimetals. Academic Press, 13, 236.
  12. Shkubatyuk, P. S. (1999). The fabrication of barrier structures by a continuous laser illumination of wide band gap АIIBVI semiconductors. Inorganic materials, 35(9), 1045-1047.
  13. Medvid, A., Onufrijevs, P., Mozolevskis, G., Dauksta, E., Rimsa, R. (2012). Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation. Nanoskale Research Letter, 7, 428-514.
  14. Huang, Y., Zhao, K., Lu, H., Jin, K., He, M., Chen, Z., Zhou, Y., Yang, G. (2006). Multifunctional characteristics of BaNb0.3Ti0.7O3/Si p-n junctions. Appl. Phys. Let., 88, 0619119.
  15. Shulpina, I. L., Zelenina, N. K., Matveev, O. A. (2000). Thermal effect of pulsed laser illumination on the real structure of CdTe single crystals. Semiconductors, 42(3), 548-552.
  16. Baydulaiva, A., Bulah, M. B., Vlasenko, А. I., Lomovtsev, А. В., Mozol, P. E. (2004). The dynamics of the formation of barrier structures in p-CdTe crystals under pulsed laser illumination. Semiconductors, 38(1), 26-29.
  17. Baydulaiva, A., Vlasenko A. I., Gokovenko B. L., Lomovtsev A. B., Mozol P. E. (2000). The measurements of structure defects in p-CdTe single crystals under the effect of laser shock wave. Semiconductors, 34(4), 443-446.
  18. Sze, C. M. Physics of semiconducting devices. ”Energiya”, 1973, 655.
  19. Babentsov, V. I., Baydulaiva, A., Bulah, M. B., Gorban, S. I., Mozol, P.E. (1988). Te effect of laser illumination on structure and recombination properties of single crystalline CdTe. Poverhnost. Fizika, hivia, mehanika, 12, 144-147.
  20. Matveev, O. A., Terentev, A. I. (2000). The fundamental principles of the series annealing of CdTe:Cl sample for the preparation of semiisolating crystals. Semiconductors, 34(11), 1316-1322.

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Published

2014-01-04

How to Cite

Брус, В. В., Ілащук, М. І., Грицюк, Б. М., Парфенюк, О. А., & Мар’янчук, П. Д. (2014). Fabrication and properties of p-n-junctions based on Cd1-x Znx Te. Eastern-European Journal of Enterprise Technologies, 6(12(66), 107–109. https://doi.org/10.15587/1729-4061.2013.19690

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

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Copyright (c) 2014 Віктор Васильович Брус, Марія Іванівна Ілащук, Богдан Миколайович Грицюк, Орест Архипович Парфенюк, Павло Дмитрович Мар’янчук

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