Effect of Ca isovalent impurity ON ZnSe<Al> properties

Authors

  • Михайло Михайлович Сльотов Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Іванна Іванівна Герман Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Олексій Михайлович Сльотов Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Василь Васильович Косоловський Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19733

Keywords:

zinc selenide, calcium, regional radiation, photosensitivity

Abstract

Zinc selenide continues to be an important material of solid-state electronics. The introduction of aluminum during growing the crystals allows significant increasing the electrical conductivity and obtaining low-resistivity material. Electronic type of conductivity is not changed. In this paper, the results of studying the effect of calcium isovalent impurity on the properties of such base material are given. The further doping of ZnSe <Al> by calcium isovalent impurity allows obtaining the surface layers with hole conductivity. Radiation formation in the moderately blue spectral region with quantum efficiency ~ 12-15% is important for practical use of such structures. It is conditioned by two components. The dominating component is defined by the annihilation process of bound excitons on Ca isovalent impurities. The availability of Ca isovalent impurities also promotes the interzonal transition of free carriers of charge, which is responsible for the nature of the second radiation component. The formation of Ca doped layers with low-resistivity basic ZnSe <Al>p-n-transition with the rectification factor not less than 10 4is important for short-wave photosensitivity. Such transitions are photosensitive and cover a spectral region ћω ~ 2,64-3,42 eV. Such photosensitivity spectra are well coordinated with the radiation spectra of Ca doped layers ZnSe <Al>.

Author Biographies

Михайло Михайлович Сльотов, Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012

Professor

Department of Optoelectronics

Іванна Іванівна Герман, Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012

Assistant

Department of Optoelectronics

Олексій Михайлович Сльотов, Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012

Assistant

Department of Electronics and Energy

Василь Васильович Косоловський, Yuriy Fedkovych Chernivtsi National University Kotsubinsky Str., 2, Chernivtsi, Ukraine, 58012

Magistr

Department of Optoelectronics

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Published

2013-12-28

How to Cite

Сльотов, М. М., Герман, І. І., Сльотов, О. М., & Косоловський, В. В. (2013). Effect of Ca isovalent impurity ON ZnSe&lt;Al&gt; properties. Eastern-European Journal of Enterprise Technologies, 6(12(66), 26–29. https://doi.org/10.15587/1729-4061.2013.19733

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

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Copyright (c) 2014 Михайло Михайлович Сльотов, Іванна Іванівна Герман, Олексій Михайлович Сльотов, Василь Васильович Косоловський

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