Electrical properties of the anisotropic n-ТiО2/P-CdTe heterojunctions
DOI:
https://doi.org/10.15587/1729-4061.2011.1781Keywords:
Heterojunction, TiO2, CdTeAbstract
The electrical properties of the n-ТіО2/p-CdTe, prepared by deposition of TiO2 film onto freshly cleaved CdTe single crystal substrates were investigated. The electric current in the heterojunctions is induced by generation-recombination processes within the depletion region and tunneling of carriersReferences
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Copyright (c) 2014 Віктор Васильович Брус, Марія Іванівна Ілащук, Захар Дмитрович Ковалюк, Павло Дмитрович Мар’янчук, Костянтин Сергійович Ульяницький, Анатолій Михайлович Кафанов
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