Epitaxial structures on the base of Cd1-xZnxSb and laser optimization of their properties

Authors

  • Юрий Константинович Обедзинский Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Андрей Иосифович Савчук Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Виктор Николаевич Стребежев Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Иван Николаевич Юрийчук Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19696

Keywords:

semiconductor, photosensitivity, epitaxial structure, laser, crystal, CdSb, Cd1-xZnxSb, heterojunction, impurity

Abstract

Photosensitive elements on the basis of CdSb and Cd1-xZnxSb single crystals, doped with Te, In, Ga, are obtained by liquid-phase epitaxy. CdSb and Cd1-xZnxSb epitaxial layers are exposed to pulsed laser radiation with energy density 2-10 J/сm2. CdSb layers surface acquires a more ordered planar morphology, density of structural defects in the heterojunction and width of the transition region are reduced at optimal mode of laser processing speed. Laser beam stimulates transformation of metastable cadmium antimonide phase inclusions into CdSb equilibrium phase. Photosensitivity of Cd1-xZnxSb based heterojunction cells is increased. The optimal level of photosensitivity is achieved by doping basic single crystals by Te. Interference bandpass filters in the form of SіO, Ge, BaF2, ZnS thin films on ZnSb single crystal are designed. Selection of incident IR radiation on the photosensitive element by such filter makes it possible to block solar and other noises in the wavelength range λ<2 micron.

Author Biographies

Юрий Константинович Обедзинский, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Head of Laboratory

Department of physics of semiconductors and nanostructures

Андрей Иосифович Савчук, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Dr. of Sciences, Professor

Department of physics of semiconductors and nanostructures

Виктор Николаевич Стребежев, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Ph.D,  Professor

Department of physics of semiconductors and nanostructures

Иван Николаевич Юрийчук, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Ph.D,  Professor

Department of physics of semiconductors and nanostructures

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Published

2014-01-04

How to Cite

Обедзинский, Ю. К., Савчук, А. И., Стребежев, В. Н., & Юрийчук, И. Н. (2014). Epitaxial structures on the base of Cd1-xZnxSb and laser optimization of their properties. Eastern-European Journal of Enterprise Technologies, 6(12(66), 103–106. https://doi.org/10.15587/1729-4061.2013.19696

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

License

Copyright (c) 2014 Юрий Константинович Обедзинский, Андрей Иосифович Савчук, Виктор Николаевич Стребежев, Иван Николаевич Юрийчук

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