Peculiarities of silicon basis growing for polysilicon production
DOI:
https://doi.org/10.15587/1729-4061.2012.4614Keywords:
polysilicon, evaporated layer, stress, gas environmentAbstract
The article considers the most accepted and well-proven method of polysilicon production, using the “Siemenstechnology”, which has been used for over 50 years. For this process, silicon bar-wafers are grown. There are certain requirements for bar-wafers as to the degree of purity, level of residual thermal stress and mechanical strength. To achieve high purity of bar-wafers, growing process is carried out in a vacuum.The analysis of the growing process showed that during the vacuum growing, silicon vaporizes from the surface of melt and condenses on the cold surfaces of accessory, walls of growing chamber and on the surface of the grown bar-wafers.
One of the areas that may be used for bar-wafers growing is the growing in the gas environment (e.g. argon) at the pressure greater or equal to atmospheric. In this case, the vaporization of melt zone reduces considerably, and the surface of bar-wafer will not have the evaporated silicon layer, its oxides and nitrides.
The conversion to the growing in gas environment using multiturn, with consecutive joining of turns of inductor, leads to gas ionization and accident risk. To reduce the stress on inductor it is necessary to use a single-turn inductor.
While applying a single-turn inductor, the stress is inversely proportional to the width of inductor’s turn. That is why, the width plays essential role in the melting process, as it helps to avoid accident risk and gas ionization.
References
- Johannes Bernreuter. Polysilicon industry faces shakeout [Электронный ресурс] - Режим доступа : http://www.bernreuter.com/fileadmin/user_upload/silicon_report/Polysilicon_Industry.pdf/ – 23.09.2012.
- Travis Bradford. Polysilicon: Supply, Demand and Implications for the PV Industry [Электронный ресурс] - Режим доступа : http://www.greentechmedia.com/research/report/polysilicon-supply-demand-and-implications-for-the-pv-industry/, 20.09.2012
- Green Rhino Energy. Value Chain Activity: Producing Polysilicon [Электронный ресурс] - Режим доступа : http://www.greenrhinoenergy.com/solar/industry/ind_01_silicon.php/, 23.09.2012.
- Brett Prior, Carolyn Campbell. Polysilicon 2012-2016: Supply, Demand & Implications for the Global PV Industry [Электронный ресурс] - Режим доступа : http://www.greentechmedia.com/research/report/polysilicon-2012-2016, 13.09.2012
- Бочкарев, Э. П. Полупроводниковый поликристаллический кремний [Текст] / А. В. Елютин, Л. С. Иванов // Изв. вузов. Цветная металлургия. - 1997. - № 5. - С. 20-26.
- Андреев, В. В. Как организовать делопроизводство на предприятии [Текст] / В. В. Андреев. – М.: ИНФРА-М, 1997. – 94 с.
- Салли, И. В. Производство полупроводникового кремния [Текст] / Э. С. Фалькевич. – М. : Металлургия, 1970. – 152 с.
- Нашельский, А. Я. Производство полупроводниковых материалов [Текст] / А. Я. Нашельский. – М. : Металлургия, 1989. – 272 с.
- Кожитов, Л. В. Технологическое вакуумное оборудование. Часть 1. Вакуумные системы технологичсекого оборудования: Учебник для вузов [Текст] / А. Ю. Зарапин, Н. А. Чиченев. – М. : Издательский дом «Руда и металлы», 2001. – 416 с.
- Фалькевич, Э. С. Технология полупроводникового кремния. Монография [Текст] / Э. С. Фалькевич, Э. О. Пульнер, И. Ф. Червоный, Л. Я. Шварцман, В. Н. Яркин, И. В. Салли // М. : Металлургия, 1992. – 408 с.
- Хирс, Д. Испарение и конденсация, пер. с англ. [Текст] / Д. Хирс, Г. Паунд // М. : Металлургия, 1966. – 196 с.
- Еланский, Г. Н. Исследование угара железа в дуговых электропечах и изменение физических свойств стали при внепечной обработке / М. В. Шишимиров, О. М. Сосонкин, К. С. Филиппов, Сазонов А. П., Крюков А. П., М. С. Добрикова [Электронный ресурс] - Режим доступа : http://ruconf.ru/upload/iblock/587/9af2e7079cc42ce1ca10412b694d085c.pdf, 10.09.2012.
- Friedrich Paschen. Uber die zum Funkenübergang in Luft, Wasserstoff und Kohlensäure bei verschiedenen Drucken erforderliche Potentialdifferenz. Annalen der Physik. 1889. – V. 273, Issue 5. – Р. 69-96. (см. также электронный ресурс – Режим доступа : http://ru.wikipedia.org/wiki/%C7%E0%EA%EE%ED_%CF%E0%F8%E5%ED%E0. 10.09.2012.
- Ратников Д.Г. Бестигельная зонная плавка.- М.: Металлургиздат, 1976. - 224 с.
- Вайнберг А.М. Индукционные плавильные печи / уч. пособие для вузов. Изд. 2, перераб. и доп. - М.: Энергия, 1967. - 416 с.
- Слухоцкий, А. Е. Индукторы для индукционного нагрева [Текст] / А. Е. Слухоцкий, С. Е. Рыскин. – Л. : «Энергия», 1974. – 264 с. с ил.
- Patent US 2011/0204044 Al United States, МПК7 H 05 B 6/36, U.S. Cl. 219/672. High-frequency coil pulling holes arrangement for producing multiple silicon cores [Электронный ресурс] / Chaoxuan Liu, Luoyang (CN) ; Режим доступа : http://www.google.com/patents?id=PdrrAQAAEBAJ&printsec=abstract&zoom=4&hl=ru#v=onepage&q&f=false , 20.09.2012
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