Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

Authors

DOI:

https://doi.org/10.15587/1729-4061.2017.104563

Keywords:

complementary structures, semiconductors, epitaxy, integrated circuits, technological features

Abstract

The technology of formation of LSI structures on GaAs epitaxial layers, formed on Si-substrates of large diameter, is developed, which makes it possible at least by an order of magnitude to reduce the production cost of crystals due to epitaxial growth of GaAs layers and the use of technological equipment of silicon technology. This technology also enables the useof  heterostructures to increase the speed of the LSI.

An analysis of complex structures of different architecture of IC/LSI on GaAs epitaxial layers, formed on Si-substrates, is carried out. The influence of the scattering processes of charge carriers on the potential fluctuations on the magnitude and profile of the mobility of electrons along the thickness of the epitaxial structure is investigated. When using epitaxial technology in structures, there are no isoconcentric impurities of oxygen and carbon, which are the factors of scattering of charge carriers, which makes it possible to achieve high values of mobility of charge carriers.

It is shown that the use of epitaxial layers of gallium arsenide eliminates the effects of isoconcentration impurities of oxygen and carbon in gallium arsenide layers that increases their purity.

A test element was implemented that allows non-destructive measurement of the mobility of charge carriers in the technological cycle of the formation of LSI structures. This allows us to realise the electrophysical diagnosis of the reliability of the LSI at the stage of crystal manufacturing

Author Biographies

Stepan Novosyadlyj, Vasyl Stefanyk Precarpathian National University Shevchenko str., 57, Ivano-Frankivsk, Ukraine, 76018

Doctor of technical sciences, Professor

Department of computer engineering and electronics

Bogdan Dzundza, Vasyl Stefanyk Precarpathian National University Shevchenko str., 57, Ivano-Frankivsk, Ukraine, 76018

PhD

Department of computer engineering and electronics

Volodymyr Gryga, Vasyl Stefanyk Precarpathian National University Shevchenko str., 57, Ivano-Frankivsk, Ukraine, 76018

PhD, Associate professor

Department of computer engineering and electronics

Svyatoslav Novosyadlyj, Soft Serve Sakharova str., 23, Ivano-Frankivsk, Ukraine, 76000

Lead Engineer 

Mykhailo Kotyk, Vasyl Stefanyk Precarpathian National University Shevchenko str., 57, Ivano-Frankivsk, Ukraine, 76018

Postgraduate student

Department of computer engineering and electronics

Volodymyr Mandzyuk, Vasyl Stefanyk PreCarpathian National University Shevchenko ave., 57, Ivano-Frankivsk, Ukraine, 76018

PhD

Department of computer engineering and electronics

References

  1. Colinge, J.-P., Colinge, C. A. (2007). Physics of Semiconductor Devices. Springer Science & Business Media, 436.
  2. Edwards, P. (2012). Manufacturing Technology in the Electronics Industry: An introduction. Springer Science & Business Media, 248.
  3. Hezel, R. (2013). Silicon Nitride in Microelectronics and Solar Cells. Springer Science & Business Media, 401.
  4. Salazar, K., Marcia, K. (2012). Mineral commodity summaries. U. S. Geological Survey, Reston, Virginia, 58–60.
  5. Naumov, A. V. (2005). Obzor mirovogo rynka arsenida galliya. Tekhnologiya i konstruirovanie v ehlektronnoy apparature, 6, 53–57.
  6. Kamineni, V. K., Raymond, M., Bersch, E. J., Doris, B. B., Diebold, A. C. (2010). Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process. Journal of Applied Physics, 107 (9), 093525. doi: 10.1063/1.3380665
  7. Yatabe, Z., Asubar, J. T., Hashizume, T. (2016). Insulated gate and surface passivation structures for GaN-based power transistors. Journal of Physics D: Applied Physics, 49 (39), 393001. doi: 10.1088/0022-3727/49/39/393001
  8. Thompson, S., Alavi, M., Hussein, M., Jacob, P., Kenyon, C., Moon, P. et. al. (2002). 130nm Logic Technology Featuring 60 nm Transistors, Low-K Dielectrics, and Cu Interconnects. Intel Technology Journal, 6 (2), 5–9.
  9. Simmons, J. G., Wei, L. S. (1974). Theory of transient emission current in MOS devices and the direct determination interface trap parameters. Solid-State Electronics, 17 (2), 117–124. doi: 10.1016/0038-1101(74)90059-8
  10. Aspnes, D. E. (1981). Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry. Journal of Vacuum Science and Technology, 18 (2), 289–295. doi: 10.1116/1.570744
  11. Ossi, P. M., Miotello, A. (2007). Control of cluster synthesis in nano-glassy carbon films. Journal of Non-Crystalline Solids, 353 (18-21), 1860–1864. doi: 10.1016/j.jnoncrysol.2007.02.016
  12. Gaan, S., Feenstra, R. M., Ebert, P., Dunin-Borkowski, R. E., Walker, J., Towe, E. (2012). Structure and electronic spectroscopy of steps on GaAs(110) surfaces. Surface Science, 606 (1-2), 28–33. doi: 10.1016/j.susc.2011.08.017
  13. Polyakov, V. I., Perov, P. I., Ermakov, M. G., Ermakova, O. N. (1991). Spektry Q-DLTS geterostruktur na osnove soedineniy GaAs i AlGaAs. Mikroehlektronika, 20 (2), 155–165.
  14. Pizzini, S. (2015). Physical Chemistry of Semiconductor Materials and Processes. John Wiley & Sons, 440. doi: 10.1002/9781118514610
  15. Novosyadlyy, S. P., Terlets'kyy, A. I. (2016). Diahnostyka submikronnykh struktur VIS. Ivano-Frankivs'k: Simyk, 478.
  16. Novosyadlyy, S. P. (2007). Fizyko-tekhnolohichni osnovy submikronnoyi tekhnolohiyi VIS. Ivano-Frankivs'k: Simyk, 370.
  17. Novosyadlyy, S. P. (2010). Sub- i nanomikronna tekhnolohiya struktur VIS. Ivano-Frankivs'k: Misto NV, 455.

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Published

2017-06-30

How to Cite

Novosyadlyj, S., Dzundza, B., Gryga, V., Novosyadlyj, S., Kotyk, M., & Mandzyuk, V. (2017). Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates. Eastern-European Journal of Enterprise Technologies, 3(5 (87), 54–61. https://doi.org/10.15587/1729-4061.2017.104563

Issue

Vol. 3 No. 5 (87) (2017): Applied physics

Section

Applied physics

License

Copyright (c) 2017 Stepan Novosyadlyj, Bogdan Dzundza, Volodymyr Gryga, Svyatoslav Novosyadlyj, Myhaylo Kotyk

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