Physical and technological features of formation of metallization of submicron arsenide-gallium structures in large-scale integrated circuits by ion milling

Authors

  • Степан Петрович Новосядлий Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000, Ukraine
  • Тарас Петрович Кіндрат Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000, Ukraine
  • Любомир Володимирович Мельник Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000, Ukraine
  • Василь Миколайович Варварук Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.16660

Keywords:

Gallium Arsenide, ohmic contact, ion implantation, ion milling, ion-beam etching, multiple-charged implantation

Abstract

In large-scale integrated circuits the size of chip is limited by the lithographic process capabilities and specified output of supplementaries, therefore the large scale integration level (105-107) implies high density of components with minimal topological elements decreasing. Since wiring in LSIC structures covers 50-75% of the chip surface, the primary task of structures minimizing is reducing the pitch of multilayer wiring.

A switch to production of LSIC submicron structures focuses the developers` attention on technological methods, ensuring maximum resolving power and formation of small elements (<0.5 mm) with high output of supplementaries.

The paper describes the principles of ion milling, methods of ion-beam processing in lithography, advantages and disadvantages as compared to other methods. It was shown that ion-beam milling is particularly efficient for profiling contact windows of multilayer wiring in LSIC structures. The LSIC structures based on GaAs (Gallium Arsenide) have been obtained with the second level of metallization performed by ion-beam etching using a photoresist mask. The efficiency of post-implantation annealing by ion-beam as compared to thermal annealing has been analyzed. Ohmic contacts with contact windows low resistance have been formed.

Author Biographies

Степан Петрович Новосядлий, Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000

Doctor of Technical Sciences, Professor

Department of Computer Engineering and Electronics

Тарас Петрович Кіндрат, Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000

Postgraduate student

Department of Computer Engineering and Electronics

Любомир Володимирович Мельник, Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000

Postgraduate student

Department of Computer Engineering and Electronics

Василь Миколайович Варварук, Precarpathian National University.V. Stefanyk, Shevchenko 57, Ivano-Frankivsk, Ukraine, 76000

Postgraduate student

Department of Computer Engineering and Electronics

References

  1. Новосядлий, С. П. Суб- і наномікронна технологія структур ВІС [Текст] / С. П. Новосядлий // Івано-Франківськ, Місто НВ. – 2010. - 254с.
  2. Шур, М. Современные приборы на арсениде галлия [Текст]/ М. Шур. – М.: Мир. - 1991.- 628 с.
  3. Афанасьев, В. А. Оборудование для импульсной термообработки ПД нейтронная техника Сер 1 [Текст] / В. А. Афанасьев, М. П. Духновский. Т. А. Крысев Электроника СВЧ. - 1984. - Вып. 12. - С. 24-29.
  4. Новосядлий, С. П. Технологічні особливості, формування шаруватих наноструктур [Текст] / С. П. Новосядлий, В. М. Вівчарук // Східно-Європейський журнал передових технологій. – 2008, № 44. – C. 32 - 38.
  5. Новосядлий, С. П. Джерела іонів для формування шаруватих структур [Текст] / С. П. Новосядлий, В. М. Бережанський // Прикарпатський вісник НТШ. – 2008 – № 1. – С. 151– 158.
  6. Ди Лоренцо, Д. В. Полевые транзисторы на арсениде галлия. Принципы работы и технология изготовления БИС [Текст] : пособие / Под ред. Д. В. Ди Лоренцо, Д. Д. Канделуола. Пер. с анг. – М: Радио и связь. - 1988. - 49с.
  7. Новосядлий, С. П. Моделювання субмікронної та нанотехнологій на основі ТС [Текст] / С. П. Новосядлий, В. М. Вівчарук, С. М. Вертепний // Східно-Європейський журнал передових технологій. – 2009. – № 117 С. –26-29.
  8. Новосядлий, С. П. Багатозарядна радикальна імплантація при формуванні SOI- структур [Текст] / С. П. Новосядлий В. М. Вівчарук // Фізика і хімія твердого тіла. – 2008. – Т9, № 3. - С. 659-667.
  9. Новосядлий, С. П. Багатозарядна іонно-імплантаційна обробка при формуванні кишень і металізації субмікронних структур ВІС [Текст] / С. П. Новосядлий, В. М. Бережанський // Металофізика і новітні технології. – 2007. - т. 29, №7. - С. 857-866.
  10. Авас, Н. А. Основы микроэлектроники [Текст] : учеб. / Н. А. Авас, Ю. Е. Наумов, В. Т. Фролкин. –М: Радио и связь. – 1999. - С. 64-67.
  11. Novosyadlyy, S. P. (2010). Sub-structures and nano-mikron technology VIS. Ivano-Frankivsk NV, 254.
  12. Shur, M. (1991) Modern instrumentation for arsenyde hallyya, 628.
  13. Afanasiev, V. A. (1984) Equipment for heat treatment of PD pulse neutron technology, 12, 24-29.
  14. Novosyadlyy, S. P. (2008). Technological features, the formation of layered nanostructures. Eastern European journal of advanced technology., 44(08), 32 - 38.
  15. Novosyadlyy, S. P., Vivcharuk, V. M. (2008). Ion source to form layered structures. Carpathian Journal of Scientific Society, 1(08), 151 - 158.
  16. Di Lorenzo, D., Kandeluola, D. D. (1988). Field-effect transistors on gallium arsenide. Principles and technology of LSI, 49.
  17. Novosyadlyy, S. P., Vivcharuk, V. M., & Vertepnyh, S. M. (2009). Simulation submicron and nano-based TS. Eastern European Journal of Advanced Technologies, 117(09), 26-29.
  18. Novosyadlyy, S. P., Vivcharuk, V. M. (2008). Multiply radical implantation in the formation of SOI-structures. Physics and Chemistry of Solids, 3(08), 659-667.
  19. Novosyadlyy, S. P., Berezhansky, V. M. (2007). Multiply charged ion-implantation processing in the formation of pockets and metallization submicron VLSI structures. Metal Physics and the latest technology, 7(07), 857-866.
  20. Awas, N. A., Naumov, J. E., Frolkin, V. T. (1999). Fundamentals of Microelectronics, 64-67.

Downloads

Published

2013-07-30

How to Cite

Новосядлий, С. П., Кіндрат, Т. П., Мельник, Л. В., & Варварук, В. М. (2013). Physical and technological features of formation of metallization of submicron arsenide-gallium structures in large-scale integrated circuits by ion milling. Eastern-European Journal of Enterprise Technologies, 4(5(64), 3–6. https://doi.org/10.15587/1729-4061.2013.16660

Issue

Vol. 4 No. 5(64) (2013): Applied physics

Section

Applied physics

License

Copyright (c) 2014 Степан Петрович Новосядлий, Тарас Петрович Кіндрат, Любомир Володимирович Мельник, Василь Миколайович Варварук

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.