Features of schematic and physical and topological design of analog integrated comparators

Authors

DOI:

https://doi.org/10.15587/1729-4061.2014.26251

Keywords:

operational amplifier, single-limit analog comparator and Schmitt trigger, C-MOS

Abstract

In practice, devices, which form either voltage with opposite polarity at the output at almost equal absolute values or voltage with the same polarity are the most widely used. The first option is typical for using as a comparison circuit of operational amplifier (OP), and the second – in using specialized integrated circuits. In the second case, the output voltages of the comparator are consistent in magnitude and polarity with the signals, used in digital technology.

Based on the above, we can say that the input signal of the comparator is of the analog nature, and output – digital. Consequently, comparators often act as elements of communication between analog and digital devices, i.e. act as analog-digital converters (ADC).

Due to the fact that both analog and digital signals are used in modern telecommunication systems, we have both analog and digital comparators, respectively. Digital comparator differs from analog in that it is designed to compare two numbers that are given in the form of binary codes.

Author Biography

Степан Петрович Новосядлий, Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025

Doctor of Technical Sciences, Professor

Department of Computer Engineering and Electronics

References

  1. Zhuikov, V. Y, Boyko, V. S, Zori, A. A. (2002). Circuitry electronic systems: Textbook in two volumes, 408.
  2. Senko, E. V, Panasenko, M. V. (2000). Electronics and microcircuitry, 300.
  3. Senko, E. V., Panasenko, M. V. (2002). Electronics and microcircuitry, 510.
  4. Novosyadlyy, S. P. (2010). Sub-nanomykron technology structures LSI. Ivano-Frankivsk City NV, 456.
  5. Novosyadlyy, S. P. (2003). Physical and technological bases submicron VLSI. Ivano-Frankivsk Seven, 52–54.
  6. Novosyadlyy, S. P. (2002). Radiation technology in the formation, submicron VLSI structures, 1003–1013.
  7. Novosyadlyy, S. P. (2002). Formation of silicon epitaxial structures for the combined VLSI, 353–365.
  8. Novosyadlyy, S. P. (2002). Technology CAD based test structures, 3 (31), 179–189.
  9. Novosyadlyy, S. P, Melnyk, L. V, Kіndrat, T. P. (2013). Physical – technical features of formation of gallium arsenide submicron metallization structures by ion milling. Eastern-European Journal of Enterprise Technologies, 4 (5), 1–6.
  10. Ifeachor, E. C., Jervis, B. W., Morris, E. L., Allen, E. M., Hudson, N. R. (1986). A new microcomputer-based online ocular artefact removal (OAR) system. IEE Proceedings A Physical Science, Measurement and Instrumentation, Management and Education, Reviews, 133(5), 291. doi:10.1049/ip-a-1.1986.0040
  11. Ifeachor, E. C., Hellyar, M. T., Mapps, D. J., Allen, E. M. (1990). Knowledge-based enhancement of human EEG signals. IEE Proceedings F Radar and Signal Processing, 137(5), 302. doi:10.1049/ip-f-2.1990.0046
  12. Harris, S. P., Ifeachor, E. C. (1998). Automatic design of frequency sampling filters by hybrid genetic algorithm techniques. IEEE Transactions on Signal Processing, 46 (12), 3304–3314. doi:10.1109/78.735305
  13. Simon, V. V., Kornilov, L. (1988). Equipment of ion implantation. Radio and Communications, 354.
  14. Ryssel, H. Ruge, I. (1983). Ion implantation. Science, 360.
  15. Boltaks, B. I. Kolotov, M. N. Skoretyna, E. A. (1983). Deep centers in gallium arsenide tied up with their own structural defects, 10.
  16. Afanasiev, V. A. Duhvskyy, M. Krasov, G. A. (1984). Equipment for impulse heat treatment of semiconductor materials, 56–58.
  17. Okamoto, T. (1985). Devices of ion implantation, 1322–1325.

Downloads

Published

2014-08-13

How to Cite

Новосядлий, С. П. (2014). Features of schematic and physical and topological design of analog integrated comparators. Eastern-European Journal of Enterprise Technologies, 4(5(70), 4–15. https://doi.org/10.15587/1729-4061.2014.26251

Issue

Vol. 4 No. 5(70) (2014): Applied physics. Materials Science

Section

Applied physics

License

Copyright (c) 2014 Степан Петрович Новосядлий

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.