Simulation high-voltage triple-junction photovoltaic converters based on amorphous and microcrystalline silicon

Authors

  • Сергій Миколайович Чеботарьов Southern Scientific Centre of Russian Academy of Science Chehova 41, Rostov-on-Don, 344006, Russia, Russian Federation
  • Олександр Сергійович Пащенко Southern Scientific Centre of Russian Academy of Science Chehova 41, Rostov-on-Don, 344006, Russia, Russian Federation
  • Марина Леонидівна Луніна Southern Scientific Centre of Russian Academy of Science Chehova 41, Rostov-on-Don, 344006, Russia, Russian Federation
  • Володимир Олександрович Ірха Limited Liability Company Special design and technology department «Inversiya» Zorge 7, Rostov-on-Don, 344006, Russia, Russian Federation

DOI:

https://doi.org/10.15587/1729-4061.2013.14504

Keywords:

Triple-junction thin-film photovoltaic converter, amorphous and microcrystalline silicon, numerical simulation

Abstract

The design of a triple-junction thin-film photovoltaic converter with hydrogen and oxygen microcrystalline and amorphous silicon layers α-Si:H(n-i-p)/μс-Si:O(n-i-p)/μс-Si:H(n-i-p) is suggested. The physical model and the software for simulation performances of these photovoltaic converters are developed. The numerical simulation results demonstrate that efficiency of the proposed thin-film photovoltaic converters can be increased to 16 %, open-circuit voltage UOC=1.957 V, fill factor ff=78%. The analyses of the triple-junction structure’s external quantum efficiency spectral dependences shows that combining α-Si:H and μс-Si:H n-i-p junction admits to use different solar irradiation regions to expand spectral sensitivity of silicon photovoltaic converter in UV and near-IR regions. Improving the performance ensures by increasing absorptance in the visible region (λ=500-800 nm) to 40-60 % and in the near-infrared region (λ=800-1100 nm) to 75-80 %.

Author Biographies

Сергій Миколайович Чеботарьов, Southern Scientific Centre of Russian Academy of Science Chehova 41, Rostov-on-Don, 344006, Russia

Candidate of Science in Engineering, senior researcher,

Laboratory of crystals and structures for solid state electronics

Олександр Сергійович Пащенко, Southern Scientific Centre of Russian Academy of Science Chehova 41, Rostov-on-Don, 344006, Russia

Candidate of science in Physics and Maths, researcher,

Laboratory of crystals and structures for solid state electronics

Марина Леонидівна Луніна, Southern Scientific Centre of Russian Academy of Science Chehova 41, Rostov-on-Don, 344006, Russia

Candidate of science in Physics and Maths, senior researcher,

Photovoltaics laboratory

Володимир Олександрович Ірха, Limited Liability Company Special design and technology department «Inversiya» Zorge 7, Rostov-on-Don, 344006, Russia

Senior engineer

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Published

2013-06-20

How to Cite

Чеботарьов, С. М., Пащенко, О. С., Луніна, М. Л., & Ірха, В. О. (2013). Simulation high-voltage triple-junction photovoltaic converters based on amorphous and microcrystalline silicon. Eastern-European Journal of Enterprise Technologies, 3(5(63), 29–34. https://doi.org/10.15587/1729-4061.2013.14504

Issue

Vol. 3 No. 5(63) (2013): The applied physics and materials technology

Section

Applied physics

License

Copyright (c) 2014 Сергій Миколайович Чеботарьов, Олександр Сергійович Пащенко, Марина Леонидівна Луніна, Володимир Олександрович Ірха

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