Properties of optical and photovoltaic cells on the base of In4Se3, In4(Se3)1-х(Te3)х crystals

Authors

  • Володимир Вікторович Стребежев Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Віктор Миколайович Стребежев Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Сергій Васильович Нічий Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine
  • Іван Миколайович Юрійчук Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19736

Keywords:

interference filter, band-pass filter, transmittance, crystals, In4(Se3)1-xTe3x, In4Se3, heterostructure, heterojunction, solid solution, photosensitivity

Abstract

Theoretical calculations of thin-film interference systems for design of IR-filters on the base of In4(Se3)1-xTe3x solid solution crystals are carried out. Interference-absorptive band-pass filters on In4(Se3)1-xTe3x crystal with different cutting wavelength position depending on the composition x of the solid solution are produced by vacuum evaporation. Spectral transmission characteristics of the filters and dependence of their parameters on structural perfection of substrates and filter films are studied. Photosensitive elements on the base of In4(Se3)1-xTe3x homo-epitaxial heterojunctions are designed and laser correction of their photosensitivity spectral characteristics is carried out. Surface morphology of epitaxial layers is studied by electron raster microscopy. Temperature dependence of In4(Se3)1-xTe3x based photosensitive elements is measured. Mechanical strength and stability of filters and photosensitive elements spectral characteristics under cooling are studied. Laser treatment of photosensitive elements significantly increases photo-response signal of epitaxial structures at optimal operating temperatures.

Author Biographies

Володимир Вікторович Стребежев, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

Graduate student

Віктор Миколайович Стребежев, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

Ph.D,  Professor

Сергій Васильович Нічий, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

Ph.D,  Professor

Іван Миколайович Юрійчук, Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, 58012, Chernivtsi, Ukraine

Department of physics of semiconductors and nanostructures

Ph.D,  Professor

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Published

2014-01-04

How to Cite

Стребежев, В. В., Стребежев, В. М., Нічий, С. В., & Юрійчук, І. М. (2014). Properties of optical and photovoltaic cells on the base of In4Se3, In4(Se3)1-х(Te3)х crystals. Eastern-European Journal of Enterprise Technologies, 6(12(66), 113–116. https://doi.org/10.15587/1729-4061.2013.19736

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

License

Copyright (c) 2014 Володимир Вікторович Стребежев, Віктор Миколайович Стребежев, Сергій Васильович Нічий, Іван Миколайович Юрійчук

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