Peculiarity of seed-layer synthesis and morphometric characteristics of ZnO nanorods

Authors

  • Anatolii Orlov National Technical University of Ukraine “Kyiv Polytechnic Institute” 16 Polytechnichna Str., off. 124, Kyiv, Ukraine 03056, Ukraine
  • Veronika Ulianova National Technical University of Ukraine “Kyiv Polytechnic Institute” 16 Polytechnique Str., off. 137, Kyiv, Ukraine 03056, Ukraine
  • Genadzi Pashkevich National Technical University of Ukraine “Kyiv Polytechnic Institute”, Kyiv, Ukraine 16 Polytechnichna Str., off. 015, Kyiv, Ukraine 03056, Ukraine
  • Oleksandr Bogdan National Technical University of Ukraine “Kyiv Polytechnic Institute”, Kyiv, Ukraine 16 Polytechnichna Str., off. 137, Kyiv, Ukraine 03056, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19737

Keywords:

seed-layer, ZnO nanorods, sol-gel, hydrothermal method, tilting

Abstract

The obtained new results of ZnO hexagonal nanorods synthesis by hydrothermal method on the lithium niobate substrate with synthesized seed-layer from sol-gel were presented. Optical microscopy, scanning electron microscopy and X-ray diffractometry were used to examine the morphometric and structural characteristics of the formed structures. The “oriented channels” for deposited by sol-gel method ZnO seed-layers was detected after annealing for the first time. It could be evidence of crystalline structure formation of the layer and wasn’t caused by the process on the interface between the layer and the substrate. It was established that the roughness of the ZnO seed-layer had significant influence on ZnO nanorods structure and caused its tilting. The diameter of single seeds had defined the diameter of nanorods obtained by hydrothermal method and was about 50 nm, the length of nanorods was about 0,5 µm. Average aspect ratio was equal to 9.3. The ZnO rod structures were regularly situated all over the substrate surface and had single-crystal structure. It is expected that vertically oriented ZnO structures can be obtained on smooth seed-layer, formed at adjusted process parameters such as sol-gel concentration and annealing temperature. The synthesized nanostructures could be applied as single functional material of nanoscale devices, such as sensing element of surface acoustic wave sensors and energy storage cells for energy harvesting due to having unique properties.

Author Biographies

Anatolii Orlov, National Technical University of Ukraine “Kyiv Polytechnic Institute” 16 Polytechnichna Str., off. 124, Kyiv, Ukraine 03056

PhD, Associate Professor

Department of Microelectronics

Veronika Ulianova, National Technical University of Ukraine “Kyiv Polytechnic Institute” 16 Polytechnique Str., off. 137, Kyiv, Ukraine 03056

Postgraduate student

Department of Microelectronics

Genadzi Pashkevich, National Technical University of Ukraine “Kyiv Polytechnic Institute”, Kyiv, Ukraine 16 Polytechnichna Str., off. 015, Kyiv, Ukraine 03056

PhD, Senior Research Fellow

Scientific and Research Institute of Applied Electronics

Oleksandr Bogdan, National Technical University of Ukraine “Kyiv Polytechnic Institute”, Kyiv, Ukraine 16 Polytechnichna Str., off. 137, Kyiv, Ukraine 03056

Deputy director

Scientific and Research Institute of Applied Electronics

References

  1. Jagadish, C. Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications [Text] / C. Jagadish, S. J. Pearton – Elsevier: Amsterdam, 2006. – 859 p.
  2. Ozgur, U. ZnO devices and applications: a review of current status and future prospects [Text] / Umit Ozgur, Hadis Morkoc // Proceedings of the IEEE – 2010. – Vol. 89, № 7. – P. 1255-1268.
  3. Banerjee, D. Large hexagonal arrays of aligned ZnO nanorods [Text] / D. Banerjee, J. Rybczynski, J. Y. Huang, D. Z. Wang, K. Kempa, Z. F. Ren // Appl. Phys. A. – 2005. – № 80. – P. 749-752.
  4. Park, W. I. Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods [Text] / W. I. Park, D. H. Kim, S. W. Jung, G. C. Yi // Appl. Phys. Lett. – 2002. – № 80. – P. 4232-4234.
  5. Orlov, A. Synthesis of ZnO Nanorods for Acoustic Wave Sensor / A. Orlov, V. Ulianova, Yu. Yakimenko, O. Bogdan, G. Pashkevich [Text] // 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO). – 2013. – P. 25-27.
  6. Solis-Pomar, F. Growth of vertically aligned ZnO nanorods using textured ZnO films [Text] / F. Solis-Pomar, E. Martinez, M. F Melendrez, E. Perez-Tijerina // Nanoscale Research Letters. – 2011. – 6:524. – 11 p.
  7. Bai, Shr-Nan. Synthesis of ZnO nanowires by the hydrothermal method, using sol–gel prepared ZnO seed films [Text] / Shr-Nan Bai, Shich-Chuan Wu // Journal of Materials Science: Materials in Electronics. – 2011. – Vol. 22, № 4. – P. 339-344.
  8. Haikuo, Sun. Room-temperature preparation of ZnO nanosheets grown on Si substrates by a seed-layer assisted solution route [Text] / Haikuo Sun, Ming Luo, Wenjian Weng, Kui Cheng, Piyi Du, Ge Shen, Gaorong Han // Nanotechnology. – IOP Publishing Ltd., 2008. – Vol. 19, № 12. – 5 p.
  9. Bogdan, A. Growing parameters and quality of ZnO seed-layer film (Part 1) [Text] / A. Bogdan, A. Orlov, V. Ulianova // Electronics and Communications. – 2012. – Vol. 6(71). – P. 7-13.
  10. Giri, P. K., Effect of ZnO seed layer on the catalytic growth of vertically aligned ZnO nanorod arrays [Text] / P. K. Giri, Soumen Dhar, Ritun Chakraborty // Materials Chemistry and Physics. – Elsevier, 2010. – Vol. 122. – P. 18-22.
  11. Pashkevich, G. A. Crystallographic orientation of imcomplete breakdown channels in ZnP2 and CdP2 monocrystals [Text] / G. A. Pashkevich, A. L. Gurskii, E. V. Lutsenko, G. P. Yablonskii, V. M. Trukhan, V. N. Yakimovich // Phys. Stat. sol. – 1991. – Vol. 123. – P. 75-78.
  12. Jagadish, C. (2006). Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications. Amsterdam, Netherlands: Elsevier, 859.
  13. Umit Ozgur, Hadis Morkoc (2010). ZnO devices and applications: a review of current status and future prospects. Proceedings of the IEEE, 89 (7), 1255-1268.
  14. Banerjee, D., Rybczynski, J., Huang, J. Y., Wang, D. Z., Kempa, K., Ren, Z. F. (2005). Large hexagonal arrays of aligned ZnO nanorods. Appl. Phys. A., 80, 749-752.
  15. Park, W. I., Kim, D. H., Jung, S. W., Yi, G. C. (2002).Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods. Appl. Phys. Lett., 80, 4232-4234.
  16. Orlov, A., Ulianova, V., Yakimenko Yu., Bogdan O., Pashkevich G. (2013). Synthesis of ZnO Nanorods for Acoustic Wave Sensor. IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO), 25-27.
  17. Solis-Pomar, F., Martinez, E., Melendrez, M. F., Perez-Tijerina E. (2011). Growth of vertically aligned ZnO nanorods using textured ZnO films. Nanoscale Research Letters, 6:524, 11.
  18. Shr-Nan Bai, Shich-Chuan Wu (2011). Synthesis of ZnO nanowires by the hydrothermal method, using sol–gel prepared ZnO seed films. Journal of Materials Science: Materials in Electronics, 22 (4), 339-344.
  19. Haikuo Sun, Ming Luo, Wenjian Weng, Kui Cheng, Piyi Du, Ge Shen, Gaorong Han (2008). Room-temperature preparation of ZnO nanosheets grown on Si substrates by a seed-layer assisted solution route. Nanotechnology, 19 (12), 5.
  20. Bogdan, A., Orlov, A., Ulianova, V. (2012). Growing parameters and quality of ZnO seed-layer film (Part 1). Electronics and Communications, 6(71), 7-13.
  21. Giri, P. K., Dhar, S., Chakraborty, R. (2010). Effect of ZnO seed layer on the catalytic growth of vertically aligned ZnO nanorod arrays. Materials Chemistry and Physics, 122, 18-22.
  22. Pashkevich, G. A., Gurskii, A. L., Lutsenko, E. V., Yablonskii, G. P., Trukhan, V. M., Yakimovich, V. N. (1991). Crystallographic orientation of imcomplete breakdown channels in ZnP2 and CdP2 monocrystals. Phys. Stat. sol., 123, 75-78.

Downloads

Published

2014-01-04

How to Cite

Orlov, A., Ulianova, V., Pashkevich, G., & Bogdan, O. (2014). Peculiarity of seed-layer synthesis and morphometric characteristics of ZnO nanorods. Eastern-European Journal of Enterprise Technologies, 6(12(66), 72–75. https://doi.org/10.15587/1729-4061.2013.19737

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

License

Copyright (c) 2014 Anatolii Orlov, Veronika Ulianova, Genadzi Pashkevich, Oleksandr Bogdan

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.