Ellipsometry in submicronic technology of formation of GIC structures
DOI:
https://doi.org/10.15587/1729-4061.2010.2856Keywords:
ellipsometry, silicon, submicron technology, testing methods, lithographyAbstract
Describes a physical and mathematical principles of ellipsometry, nature of its use to determine the optical constants, monitoring and study the properties and processes for functional layers in the formation of submicron structures of large integrated circuits.References
- Новосядлий С.П. Фізико-технологічні основи субмікронної технології великих інтегральних схем. – Івано-Франківськ, Сімик – 2003, 350с.
- Аззак Р., Башара Н. Эллипсометрия и поляризационный свет. Пер. с англ. под ред. А.В.Ржанова, К.К.Свиташева. – М.: Мир. – 1981. – 583 с.
- D. Aspnes. Studies of sarfase, thin film and interface properties by automatic spectroscopic ellipsometry. – J,Vac. Sci Technol. – 1981, - v 18, №2, p.289-295.
- Adams J.R., Bachara N.M. SiO2 thick nesses determination by reflection ellipsometry: substrate effects. – Surf Sci 1985. v 47. – p. 655-660.
- Aspnes D.E., Theeten J.B. Spectroscopic analysis of the interface between Si and its thermally grown oxide. – J, Electronics Soc, - 1980, vol 127, №6, p.1359-1361.
- Dinges H.W. An ellipsometrie study SiO2-Si3N4 double lagers on silicon produced by chemical vapour deposition. – Thin Solid Films – 1981, - vol 78, p.63-66.
- Лонский Э.С. Основное уравнение эллипсометрии для тестовых дифракционных решеток, применяемых при контроле структур БИС. – Микроэлектроника, 1987. т.10, вып.6, с.537-542.
- Motooka T., Watanabe K. Damage profile determination of ionimplanted Si layers by ellipsometry. – J. Appl Phys. – 1980, v.51, №8. – p. 4125-4129.
- А.С. Мардемов, В.Г. Серяпин. Определение комплекного показателя преломления в ионвнедренных слоях из эллипсометрических измерений // Физика и техника полупроводников. – 1989. – ТВ, №12., с.2347-2353.
- J.B. Theeten, D.E. Aspnes, Simonfut F., Erman. M. Non-destructure analysis of Si3N4/SiO2/Si structures using spectroscopic ellipsometry. – J. Appl Phys. – 1981, v.52(II). – p. 6788-6797.
- Novosyadly S. Amplitude-phase-shift masks for protection litography of submicron technology. Procudings of the VII-th International Conference CADSM 2003. – Lviv-Slavske, Ukraine., p.66-68.
- Позитивне рішення експертизи винаходів по мікроелектроніці. №94061566 від 9.03.93 Спосіб виготовлення напівпровідникових приладів / Новосядлий С.П., Біровий О.Л., Гутак І.М., Масовий Н.П. / №13551 від 13.06.94, №8 від 29.12.94.
- Новосядлий С.П. Висококонтрастний фоторезист для субмікронної технології ВІС// Фотоелектроніка – 2000 - №9. – с.37-42.
- Новосядлий С.П. Аналітичні фізико-хімічні методи аналізу і контролю в системній технології ВІС// Вимірювальна та обчислювальна техніка в технологічних процесах. – 1999. - №3. – с.30-38.
- Новосядлий С.П. Технологічний САПР на основі ТС// Фізика і хімія твердого тіла. – 2002. – т.3, №1., с.179-189.
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