Features of silicon and gaas on isolator technology

Authors

DOI:

https://doi.org/10.15587/1729-4061.2014.31582

Keywords:

DeleCut method, SmartCut method, CMOS, multi-charge implantation, oxynitride, nitric drying

Abstract

It is shown that today the main problem of SOI technology is the low reproducibility of parameters when using high-temperature technology of synthesis and detachment of mono Si layer in a hydrogen atmosphere.
Physical basics of the methods for creating silicon-on-insulator (SOI) and gallium arsenide-on-insulator (GAOI) structures using different methods were considered in the paper. Major attention was paid to the «DeleCut» method (ion irradiated Deleted oxide Out), which is essentially a modification of the known «SmartCut» method and is intended to eliminate a lack of basic method.

DeleCut method allows significantly reduce the annealing temperature and concentration of radiation defects in SOI and GAOI structures, decrease the thickness of the cut off layer of silicon or gallium arsenide and the transition layer between the SOI or GAOI layer and hidden oxide (oxynitride). Simultaneously, an increase in thickness uniformity of SOI or GAOI layers and dielectric (semiinsulaedr semiconductor) to several nanometers is achieved.

Author Biographies

Степан Петрович Новосядлий, Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025

Doctor of Technical Sciences, Professor

Department of Computer Engineering and Electronics

Любомир Васильович Мельник, Carpathian National University. V.Stefanyk Shevchenka 57, Ivano-Frankivsk, Ukraine 76025

Graduate student

Department of Computer Engineering and Electronics

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Published

2014-12-23

How to Cite

Новосядлий, С. П., & Мельник, Л. В. (2014). Features of silicon and gaas on isolator technology. Eastern-European Journal of Enterprise Technologies, 6(9(72), 26–31. https://doi.org/10.15587/1729-4061.2014.31582

Issue

Vol. 6 No. 9(72) (2014): Information and controlling system

Section

Information and controlling system

License

Copyright (c) 2014 Степан Петрович Новосядлий, Любомир Васильович Мельник

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