Іnfluence of technological conditions of CdTe:v crystals on their equilibrium characteristics

Authors

DOI:

https://doi.org/10.15587/1729-4061.2014.33649

Keywords:

CdTe, impurity, compensation, defect, thermal stability, changes in stoichiometry, conductivity, equilibrium, mobility, semi-isolating

Abstract

The equilibrium characteristics of conductivity s(Т) and Hall coefficient RH(Т) were researched in temperature region of 290 – 430 К for CdTe:V single crystal. Samples under study were taken from different parts of the ingots grown by vertical Bridgman technology from synthesized material with stoichiometric content in thermodynamic equilibrium conditions of the phases. The ingots had various impurity concentrations in the melt ( 5·1018 and 1·1019 сm-3) and different cooling speed after the growth (500 К·hour-1and 50 К·hour-1).

The grown material was semi-isolating with n-type conductivity (ρ300К @2·109-1·1010 Ω·сm), rather homogeneous along the ingot, but electron Hall mobility decreased towards the upper part of it. Electric parameters of the samples which were cooled more quickly after the growth did not change after the measuring cycle. Heating of slowly cooled crystals was accompanied by irreversible changes by increase of free carriers concentration and decrease of mobility. The cause of the observed changes may be additional generation of defects of acceptor type during heating which affects the compensation conditions.

Author Biographies

Орест Архипович Парфенюк, Fedkovych Chernivtsi National University 2, Kotsiubynsky St., Chernivtsi, Ukraine, 58012

Doctor, Professor

Department of Electronics and Energy Engineering

Андрій Онуфрійович Курик, V.E. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences 41, Prospekt Nauky, Kyiv, Ukraine, 03028

Junior Research Fellow

Semiconductor radiation detectors department 

Марія Іванівна Ілащук, Fedkovych Chernivtsi National University 2, Kotsiubynsky St., Chernivtsi, Ukraine, 58012

Candidate of physico-mathematical sciences, Assistant Professor

Department of Electronics and Energy Engineering

Наталія Миколаївна Гавалешко, Fedkovych Chernivtsi National University 2, Kotsiubynsky St., Chernivtsi, Ukraine, 58012

Candidate of physico-mathematical sciences, Associate Professor

Department of Electronics and Energy Engineering

Сергій Миколайович Чупира, Fedkovych Chernivtsi National University 2, Kotsiubynsky St., Chernivtsi, Ukraine, 58012

Candidate of physico-mathematical sciences, Associate Professor

Department of Electronics and Energy Engineering

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Published

2014-12-23

How to Cite

Парфенюк, О. А., Курик, А. О., Ілащук, М. І., Гавалешко, Н. М., & Чупира, С. М. (2014). Іnfluence of technological conditions of CdTe:v crystals on their equilibrium characteristics. Eastern-European Journal of Enterprise Technologies, 6(9(72), 32–36. https://doi.org/10.15587/1729-4061.2014.33649

Issue

Vol. 6 No. 9(72) (2014): Information and controlling system

Section

Information and controlling system

License

Copyright (c) 2014 Орест Архипович Парфенюк, Андрій Онуфрійович Курик, Марія Іванівна Ілащук, Наталія Миколаївна Гавалешко, Сергій Миколайович Чупира

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