Influencе of carbon atoms on formation of impurity complexes in silicon single crystals
DOI:
https://doi.org/10.15587/1729-4061.2012.5577Keywords:
Silicon, single crystal, carbon, impurity complexAbstract
It is experimentally established, that during growth of dislocations-free silicon single crystals on method Czochralski owing to change of a ratio of impurity concentration there is an activization of participation of carbon atoms in impurity complexes formationReferences
- Проспект фирмы МЕМС, 1994-1995. – 12 с.
- Wijaranacula W. Numerical modeling of the point defect aggregation during the Czochralski silicon crystal growth / W. Wijaranacula // Journal of electrochemical society. – 1992. - Vol. 139, № 2. - P. 604-616.
- Червоний І.Ф. Напівпровідниковий кремній: теорія і технологія виробництва / І.Ф. Червоний , В.З. Куцова, В.І. Пожуєв, Є.Я. Швець, О.А. Носко, С.Г. Єгоров, Р.М. Воляр. – Запоріжжя: Видавництво ЗДІА, 2009. – 488 с.
- Червоний, І.Ф. Управління концентрацією кисню під час вирощування монокристалів кремнію / І.Ф. Червоний, Є.Я. Швець, О.П. Головко, Р.М. Воляр // Металургія: Збірник наукових праць ЗДІА. - Запоріжжя: ЗДІА, 2005. – Вип. 11. – С. 63-69.
- Швец Е.Я., Головко Ю.В. Исследование распределения углерода между расплавом, твёрдой и газовой фазами в процессе выращивания монокристаллов кремния / Металургія. Збірник наукових праць ЗДІА. - Запоріжжя: ЗДІА, 2008. – Вип. 17. – С. 104-108.
- ASTM F1391. Standard test method for substitutional atomic carbon content of silicon by infrared absorption // Annual Book of ASTM Standards.Vol.10.05 (1997).
- Швець Є.Я., Головко Ю.В. Вплив комплексоутворення на коефіцієнти розподілу домішок у процесі вирощування монокристалів кремнію / Металургія. Збірник наукових праць ЗДІА. - Запоріжжя: ЗДІА, 2011. – Вип. 25. – С. 124 – 131.
- ASTM F1727. Standard practice for detection of oxidation induced defects in polished silicon wafers // Annual Book of ASTM Standards.Vol.10.05 (1997).
- Рейви К. Дефекты и примеси в полупроводниковом кремнии; пер. с англ. – М.: Мир, 1984. – 475 с.
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2014 Юрій Васильович Реков, Іван Федорович Червоний, Євген Якович Швець, Юрій Вікторович Головко
This work is licensed under a Creative Commons Attribution 4.0 International License.
The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.
A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.
