Small-sized diode thermal sensor

Authors

  • Леонід Францович Політанський Jurij Fedkovych Chernivtsi National University, Kotsiubyns’kyy street 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Петро Олексійович Яганов National Technical University Ukraine KPI Prospect Pobedy, 37, Kiev, 03056, Ukraine https://orcid.org/0000-0001-7358-9846
  • Валентин Вікторович Лесінський Jurij Fedkovych Chernivtsi National University, Kotsiubyns’kyy street 2, Chernivtsi, Ukraine, 58012, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2012.6016

Keywords:

diode thermal sensor, microelectronic technology, self-heating

Abstract

The design implementation of the small unpacked silicon diode thermal sensor, manufactured by the microelectronic technology at the silicon structures with the dielectric isolation is the most accurate and reproducible technology for the measurement of temperature in the range 4 - 500 K.

The die form of the micro thermal sensor minimizes the sizes and weight, and reduces its thermal resistance and lag; and the insulating cover protects the device from the external influence.

The manufacture of the die form of the microelectronic sensor consists of 3 phases: a crystal cut into workpieces and provision of the external connections by the thermocompression of conductors; the micro sensors assembly; testing and control measurements for selection of the micro sensors according to the defined criteria.

The results showed that the thermal resistance of the sensor on silicon structures with the dielectric isolation of the volume not more than 1 мм3 in the die form on a flexible crystal holder would not exceed 20 K / W.

The suggested design of the thermal sensor could be applied in medicine, food industry and methods of technological processes control, etc

Author Biographies

Леонід Францович Політанський, Jurij Fedkovych Chernivtsi National University, Kotsiubyns’kyy street 2, Chernivtsi, Ukraine, 58012

Professor

Department of Radio Engineering and Information Security

Петро Олексійович Яганов, National Technical University Ukraine KPI Prospect Pobedy, 37, Kiev, 03056

Candidate of Technical Sciences, docent

Department of Design of Computer Hardware

Валентин Вікторович Лесінський, Jurij Fedkovych Chernivtsi National University, Kotsiubyns’kyy street 2, Chernivtsi, Ukraine, 58012

Assistant of the Department of Radio Engineering and Information Security

References

  1. ShwartsYu.M., Borblik V.L., Kulish N.R., Sokolov V.N., Shwarts M.M.,Venger E.F. Silicon Diode Temperature Sensor without a Kink of the Response Curve in Cryogenic Temperature Region // Sensors and Actuators. – 1999. – A.76. – P. 107 – 111.
  2. Яганов П.А. Кремниевые микросенсоры температуры на основе p-n перехода // Электроника и связь. – 2004. – том 9, № 22. – C.134 – 139.
  3. Dodrill B.C., Krause J.K., Swinehart P.R., Wang V. Performance Characteristics of Silicon Diode Cryogenic Temperature Sensors // Applications of Cryotronic Technology. – 1991. – No 10. – Р. 85-107.

Published

2012-12-26

How to Cite

Політанський, Л. Ф., Яганов, П. О., & Лесінський, В. В. (2012). Small-sized diode thermal sensor. Eastern-European Journal of Enterprise Technologies, 6(12(60), 4–6. https://doi.org/10.15587/1729-4061.2012.6016

Issue

Section

Sensory semiconductor devices