Resistance of In2О3–p-InSe photoconverter to different types of irradiation
DOI:
https://doi.org/10.15587/1729-4061.2012.6020Keywords:
layered crystal, indium selenide, gamma radiation, electron radiation, neutron radiationAbstract
The article presents the results of irradiation of In2O3–p-InSe photoconverters by braking γ-quanta, high-energy electrons and gamma-neutrons. In particular, their electrical and photoelectrical parameters were analyzed. The latest were compared to the similar parameters of test solar IТО–SiO2–n-Si element. For the initial doses, depending on the type of irradiation, the major changes consisted in:
- the improvement of the rectification factor K at 10-100% and the monochromatic volt-watt sensitivity SU at 18-44%;
- the maintenance or increase of voltage of idle running Uхх;
- the increase of the short-circuit current Jкз at 7% ( under the action of gamma-neutrons and electrons) and the monochromatic ampere-watt sensitivity of SI at 11-28% ( under the action of γ-quanta and electrons).
In other cases, the listed parameters have been experiencing the minimal decline (up to 5%). The imperfection coefficient ВАХ n has remained constant or has even slightly improved (under the action of gamma-neutron). With further radiation, it was fixed: values Uхх, Jкз, SU and SI were saved in case of γ-quanta; Uхх and SU increased under the action of electrons, K value was significantly improved and Uхх was unchanged in case of gamma neutrons. The decline of the rest of the parameters was in the range 2-12%. The specific changes in the spectral contours of photoresponse were not detected (except the irradiation by electrons). The possible mechanisms of radiation damages were discussed. In case of γ- and electron radiation, this is the generation of point defects - Frenkel pairs, in case of neutron radiation - formation of vacancy and internodal clusters. At the same time, the used doses and types of radiation have caused severe damage of IТО–SiO2–n-Si structureReferences
- Kovalyuk, Z.D. Intrinsic conductive oxide–p-InSe solar cells [Текст] / Z.D. Kovalyuk, V.M. Katerynchuk, A.I. Savchuk, O.M. Sydor // Mater. Sci. Eng. B. – 2004. – V. 109. – P. 252–255.
- Савицкий, П.И. Анизотропия электропроводности в моноселениде индия [Текст] / П.И. Савицкий, З.Д. Ковалюк, И.В. Минтянский // Неорганические материалы. – 1996. – Т.32, №4. – С. 405–409.
- Bakhtinov, A.P. Formation of nanostructure on the surface of layered inse semiconductor caused by oxidation under heating [Текст] / A.P. Bakhtinov, Z.D. Kovalyuk, O.N. Sydor, V.N. Katerinchuk, O.S. Litvin // Physics of the Solid State. –2007. – V. 49, N. 8. – P. 1572–1578.
- Вавилов, В.С. Радиационные эффекты в полупроводниках и полупроводниковых приборах [Текст] / В.С. Вавилов, Н.А. Ухин. – М.: Атомиздат, 1969 – 310 c.
- Balitskii, O.A. Thermodinamic study of AIIIBVI compounds oxidation [Текст] / O.A. Balitskii, V.P. Savchyn // Materials Science in Semiconductor Processing. – 2004. – V. 7. – P. 55–58.
- Alekperov, O.Z. Interband photoconductivity in layer semiconductors GaSe, InSe and GaS [Текст] / O.Z. Alekperov, M.O. Godjaev, M.Z. Zarbaliev, R.A. Suleymanov // Solid State Communication. – 1991. – V. 77, N. 1. – P. 65–67.
- Alekperov, O.Z. Intermediate type excitons in schottky barriers of A3B6 layer semiconductors and UV photodetectors [Текст] / O.Z. Alekperov, N.M. Guseinov, A.I. Nadjafov // Phys. stat. sol. (c). – 2006. – V. 3, N. 8. – P. 2669–2672.
- Ahmed, S.N. Physics and engineering of radiation detection [Текст] / S.N. Ahmed. –London: Academic Press, 2007 – 764 p.
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