Electrical properties of isotype heterojunctions n-TiN/n-Si

Authors

  • Михайло Миколайович Солован Chernivtsi National University. Fed'kovich str. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Павло Дмитрович Мар’янчук Chernivtsi National University. Fed'kovich str. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Віктор Васильович Брус Institute of Materials Science. Frantsevich NAS of Ukraine str. Irene Wilde, 5, Chernivtsi, Ukraine, 58000, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2012.6024

Keywords:

heterojunction, series resistance, TiN

Abstract

Titanium nitride and silicon are promising materials for use in various photoelectric devices due to their physical properties, so the research of the isotype heterojunctions n-TiN/n-Si is of considerable interest.

The article studies the electrical properties of the heterojunctions formed by deposition of thin-film ТiN of conductivity of n-type on single crystal supports of Si of conductivity of n-type by the method of reactive magnetron sputtering of pure titanium target in mixtures of argon and nitrogen at continuous voltage. The partial pressures of argon and nitrogen are 0.35 Pa and 0.7 Pa, respectively, at constant magnetron power 120 watts.

The volt - ampere characteristics of the heterojunction TiN / Si were measured by the measuring complex SOLARTRON SI 1286, SI 1255.

There is an analysis of temperature dependence of height of potential barrier and successive resistance of the heterojunction. The concentration of surface states (mismatch dislocations) Nss at the heterojunctions interface constitutes 2.67 × 1013 sm-2.

It was determined that the dominant mechanism of current flow through the heterojunction n-TiN/n-Si at direct bias is well described in the tunnel model

Author Biographies

Михайло Миколайович Солован, Chernivtsi National University. Fed'kovich str. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Postgraduate

Павло Дмитрович Мар’янчук, Chernivtsi National University. Fed'kovich str. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Doctor of Physics and Mathematics, Professor, Head of Department

Department of Electronics and Energy

Віктор Васильович Брус, Institute of Materials Science. Frantsevich NAS of Ukraine str. Irene Wilde, 5, Chernivtsi, Ukraine, 58000

Postgraduate

Chernivtsi Department

References

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Published

2012-12-26

How to Cite

Солован, М. М., Мар’янчук, П. Д., & Брус, В. В. (2012). Electrical properties of isotype heterojunctions n-TiN/n-Si. Eastern-European Journal of Enterprise Technologies, 6(12(60), 34–36. https://doi.org/10.15587/1729-4061.2012.6024

Issue

Vol. 6 No. 12(60) (2012): Sensory semiconductor devices

Section

Sensory semiconductor devices

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Copyright (c) 2014 Михайло Миколайович Солован, Павло Дмитрович Мар’янчук, Віктор Васильович Брус

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