Photosensitive heterostructures and infrared filters on CdSb and In4Se3 single crystals
DOI:
https://doi.org/10.15587/1729-4061.2012.6029Keywords:
semiconductor, single crystal, heterostructure, infrared filter, CdSb, In4Se3Abstract
Photosensitive CdSb–Cd1-xZnxSb and In4Se3–In4Тe3 heterostructure elements and interference absorptive cutting filters based on CdSb and In4Se3 semiconductor single crystals have been obtained by biquid-phase epitaxy and vacuum deposition. Laser modification of epitaxial layers has been carried out and layers morphology and structure are investigated. It is shown that the optimal intensity of laser treatment leads to improving of transition layer structure and gives sharp heterojunctions which are photosensitive in the infrared wavelengths region. These heterojunctions exhibit significant photosensitivity at room temperature. Spectral photosensitivity characteristics of CdSb–Cd1-xZnxSb and In4Se3–In4Тe3 heterostructures covers entire infrared wavelengths region. Interference absorptive cutting filters on CdSb single crystals with cutting limit λcut= 2,5 ÷ 3,9 mm, as well as on In4Se3 single crystals with λcut=1,8 ÷ 3,3 mm have been obtained. Spectral characteristics and parameters of the filters and photosensitive elements are studied. Electron microscope investigations and microanalysis of their structure have been carried out. Practical applications of photosensitive elements in optoelectronic devices are proposedReferences
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Copyright (c) 2014 Юрій Костянтинович Обедзинський, Богдан Миколайович Грицюк, Віктор Миколайович Стребежев, Володимир Вікторович Стребежев, Іван Миколайович Юрійчук
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