Photoelectrical properties of heterojunctions based on InSe and nuclear quadrupole resonance in source materials

Authors

  • Виктор Александрович Хандожко Yuriy Fedkovych Chernivtsi National University Ukraine, 58000, Chernivtsi, 2 Kotsjubynskyi Str., Ukraine
  • Захар Дмитриевич Ковалюк Chernivtsi Department of The I.N. Frantsevich Institute for problems in materials science Ukraine, 58001, Chernivtsi, 5 I. Vilde Str., Ukraine
  • Захар Русланович Кудринский The Chernivtsi Department I.N. Frantsevich Institute for problems in materials science Ukraine, 58001, Chernivtsi, 5 I. Vilde Str., Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.9286

Keywords:

layered semiconductors, heterojunctions, annealing of crystals, NQR spectra, structural defects, photoelectric properties.

Abstract

The article studies the effect of low-temperature annealing of source single crystals InSe on the photoelectric properties of the heterojunctions n-InSe-p-InSe. It was found that the maximum improvement of the parameters of the heterojunctions was observed at annealing temperatures of the source material 150 - 200 °C and the duration of 4 hours. The improvement of the quality of single-crystal samples after annealing was confirmed by multiplicity of NQR spectra, which reflect the collating in the system of polytypes of layered structure of InSe. Reduction of defects, including stacking and flat dislocations defects during annealing had had positive effect on the photoelectric parameters of the heterojunctions. The latter follows the dynamics of the currentvoltage characteristics and the growth of photoresponse of the heterostructure n-InSe-p-InSe. The improvement of the characteristics of the heterojunction was connected with the change of concentration of defects near the heterojunction boundary and the decrease of the impedance in the volume of the sample along the c axis. For the annealed materials the structure n-InSe-p-InSe is characterized by an increase of the intensity of the exciton peak, the growth of the open-circuit potential from 0.29 to 0.56 V and the growth of the short-circuit current from 350 to 840 mkA/sm2. The maximum growth of the conversion factor according to the photocurrent and photovoltage at a wavelength of λ = 0,98 mkm after annealing was ΔSI = 89%, and ΔSV = 24%, respectively.

Author Biographies

Виктор Александрович Хандожко, Yuriy Fedkovych Chernivtsi National University Ukraine, 58000, Chernivtsi, 2 Kotsjubynskyi Str.

Ph.D. student

The department of Radio Engineering and Information Security

The College of Physics

Захар Дмитриевич Ковалюк, Chernivtsi Department of The I.N. Frantsevich Institute for problems in materials science Ukraine, 58001, Chernivtsi, 5 I. Vilde Str.

D.Sc. (physics, mathematics), Professor

Head of the Chernivtsi Department

Захар Русланович Кудринский, The Chernivtsi Department I.N. Frantsevich Institute for problems in materials science Ukraine, 58001, Chernivtsi, 5 I. Vilde Str.

Ph.D. student

References

  1. Катеринчук, В.Н. Получение гетероструктур окисел–p-InSe с улучшенными фотоэлектрическими характеристиками [Текст] / В.Н. Катеринчук, З.Д. Ковалюк // ФТП. – 2004. – Т. 38, № 4. – С. 417-421.
  2. Катеринчук, В.Н. Размерный оптический эффект в наноструктурированных пленках In2O3 [Текст] / В.Н. Катеринчук, З.Р. Кудринский // ФТП. – 2013. – Т. 47, № 3. – С. 320-323.
  3. Katerinchuk V.N., Kovalyuk M.Z. InSe p-n homojunction diodes. Phys. stat. sol. (a), 1992, Vol.133, № 1, pp. K45-K48.
  4. Ковалюк, З.Д. Характеристики гетеропереходов окисел–p-InSe в условиях рентгеновского облучения [Текст] / З.Д. Ковалюк, В.Н. Катеринчук, О.А. Политанская, Н.Д. Раранский // ФТП. – 2006. – Т. 40, № 8. – С. 940-943.
  5. Бакуменко, В.Л. Электрические свойства оптических контактов слоистых полупроводников [Текст] / В.Л. Бакуменко, В.Ф. Чишко // ФТП. – 1977. – Т. 11, № 10. – С. 2000-2002.
  6. Бакуменко, В.Л. Исследование гетеропереходов InSe-GaSe, приготовленных посадкой на оптический контакт. II. Характеристики переходов с освещенным слоем [Текст] / В.Л. Бакуменко, З.Д. Ковалюк, Л.Н. Курбатов, В.Г. Тагаев, В.Ф. Чишко // ФТП. – 1980. – Т. 14, № 8. – С. 1573-1577.
  7. Ковалюк, З.Д. Влияние гамма-облучения на свойства InSe-фотодиодов [Текст] / З.Д. Ковалюк, В.Н. Катеринчук, О.А. Политанская, О.Н. Сидор, В.В. Хомяк // Письма в ЖТФ. – 2005. – Т.31, №9. – С. 1-5.
  8. Ковалюк, З.Д. Влияние нейтронного облучения на фотоэлектрические параметры структур n-p-InSe [Текст] / З.Д. Ковалюк, О.А. Политанская, П.Г. Литовченко, В.Ф. Ластовецкий, О.П. Литовченко, В.К. Дубовой, Л.А. Поливцев // Письма в ЖТФ. – 2007. – Т.33, №18. – С. 14-22.
  9. Blasi C., Manno D., Mongelli S. The stacking of polytypes in InSe crystals. Phys. stat. sol. (a), 1985, Vol.90, No.1, pp. K5-K6.
  10. Bastow T.J., Cambell I.D., Whitfeld H.J. A 69Ga, 115In NQR study of polytypes of GaS, GaSe and InSe. Sol. St. Com., 1981, V. 39, pp. 307-311.
  11. Bastow T.J., Whitfield H.J. Nuclear Quadrupole Resonance of 69Ga and 115In in Chalcogenides MX and M2X3. Journal of Magnetic Resonance, 1975, V.20, pp. 1-10.
  12. Ластивка, Г.И. Влияние отжига на спектры ЯКР и характеристики гетерофотодиодов GaSe-InSe [Текст] / Г.И. Ластивка, О.Н. Сидор, З.Д. Ковалюк, А.Г. Хандожко // Восточно - Европейский Журнал передовых технологий. – 2010. – №4/5(46). – С. 28-34.
  13. Abay B., Guder H.S., Efeoglu H., Yogurtcu Y.K. Excitonic absorption and Urbach-Martienssen's tails in Er-doped and undoped n-type InSe. J. Phys. D: Appl. Phys, 1999, Vol.32, No. 22, pp. 2942-2948.

Downloads

Published

2013-02-05

How to Cite

Хандожко, В. А., Ковалюк, З. Д., & Кудринский, З. Р. (2013). Photoelectrical properties of heterojunctions based on InSe and nuclear quadrupole resonance in source materials. Eastern-European Journal of Enterprise Technologies, 1(5(61), 33–38. https://doi.org/10.15587/1729-4061.2013.9286

Issue

Vol. 1 No. 5(61) (2013): The applied physics and materials technology

Section

Applied physics

License

Copyright (c) 2014 Виктор Александрович Хандожко, Захар Дмитриевич Ковалюк, Захар Русланович Кудринский

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.