A study of the third-order nonlinear susceptibility and nonlinear absorption of inas in the middle infrared region
DOI:
https://doi.org/10.15587/1729-4061.2017.112339Keywords:
nonlinear third-order susceptibility, four-wave interaction, narrow-band semiconductors, breakdown thresholdAbstract
Nonlinear susceptibilities of the third order χ(3) and the coefficient of nonlinear absorption in n-type InAs with a different degree of doping are measured at room and nitrogen temperatures. The values of the third-order nonlinear susceptibilities χ(3)⋍10–7 esu derived from these measurements essentially exceed the values calculated on the basis of the model featuring the nonlinear susceptibility of the electrons, being in conduction-band nonparabolicity. It is shown, that the observed discrepancy is eliminated, if to consider a dissipation of energy of electrons in the calculation. The growth of efficiency in four-wave mixing in narrow-gap semiconductors is restricted to nonlinear absorption of interacting waves. It has been found that, nonlinear absorption in InAs is due to free holes that arise as a result of three-photon absorption. The breakdown threshold on the surface and constant of the nonlinear absorption in InAs were measured.
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Copyright (c) 2017 Musaver Abdulsalam Musaev, Ibrahim Isa Abbasov, Aliashraf Latif Baxtiyarov
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