Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

Authors

DOI:

https://doi.org/10.15587/1729-4061.2017.118725

Keywords:

gallium arsenide, electrochemical etching, morphology, porous semiconductors, etching conditions

Abstract

The method for the formation of porous gallium arsenide in a solution of hydrochloric acid was improved. The goal of present research was to establish correlation between conditions of electrochemical etching of gallium arsenide crystals and morphology of low-dimensional structures. Porous layers were formed by the method of electrochemical etching in a solution of hydrochloric acid. The mode of electrolyte agitation was applied. This makes it possible to avoid the formation of bubbles on the surface of the crystal during etching and leads to the formation of regular porous space. Basic regularities in the formation of porous spaces were studied. It was shown that morphological properties of por-GaAs depend on etching conditions.

The effect was explored of current density on the thickness of a porous layer and diameter of pores. It was established that the composition and concentration of electrolyte correlate with surface porosity and affect the rate of crystal dissolution reaction. Etching time determines thickness of a porous layer and surface porosity. Chemical composition of por-GaAs was explored. An oxide layer was not formed on the surface of the examined samples; oxygen was present only in small concentrations. Stoichiometry of the samples was disrupted towards an excess of gallium atoms

Author Biographies

Sergij Vambol, National University of Civil Protection of Ukraine Chernyshevska str., 94, Kharkiv, Ukraine, 61023

Doctor of Technical Sciences, Professor, Head of Department

Department of Applied Mechanics

Ihor Bogdanov, Berdyansk State Pedagogical University Schmidta str., 4, Berdyansk, Ukraine, 71100

Doctor of Pedagogical Sciences, Professor, Rector

Viola Vambol, National University of Civil Protection of Ukraine Chernyshevska str., 94, Kharkiv, Ukraine, 61023

Doctor of Technical Sciences, Associate Professor

Department of Labour Protection and Technogenic and Ecological Safety

Yana Suchikova, Berdyansk State Pedagogical University Schmidta str., 4, Berdyansk, Ukraine, 71100

PhD, Associate Professor

Department of Vocational Education

Hanna Lopatina, Berdyansk State Pedagogical University Schmidta str., 4, Berdyansk, Ukraine, 71100

PhD, Associate Professor

Department of preschool, special and social education

Natalia Tsybuliak, Berdyansk State Pedagogical University Schmidta str., 4, Berdyansk, Ukraine, 71100

PhD

Department of preschool, special and social education

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2017-12-18

How to Cite

Vambol, S., Bogdanov, I., Vambol, V., Suchikova, Y., Lopatina, H., & Tsybuliak, N. (2017). Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide. Eastern-European Journal of Enterprise Technologies, 6(5 (90), 22–31. https://doi.org/10.15587/1729-4061.2017.118725

Issue

Vol. 6 No. 5 (90) (2017): Applied physics

Section

Applied physics

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Copyright (c) 2017 Sergij Vambol, Ihor Bogdanov, Ihor Bogdanov, Viola Vambol, Viola Vambol, Yana Suchikova, Yana Suchikova, Hanna Lopatina, Hanna Lopatina, Natalia Tsybuliak, Natalia Tsybuliak

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