Features for the design of a specialized information-measuring system for the study of thermoelectric properties of semiconductors

Authors

DOI:

https://doi.org/10.15587/1729-4061.2021.227135

Keywords:

computer tools, information-measuring systems, signal processing, microcontroller systems, circuit design, speed, thermoelectric properties, defects identification

Abstract

Methods for studying thermoelectric parameters of semiconductors that are optimal for the implementation of software and hardware have been analyzed and selected. It is based on the Harman method and its modifications, adapted for pulse measurements, which are convenient to implement on a modern element base. An important advantage of these methods is the absence of the need for accurate measurements of heat fluxes, which greatly simplifies and reduces the time for conducting experimental research.

The required operating ranges for the voltage 10 µV–1 V, for the current 10 µA–300 mA and the element base performance at the processing level of 40–200 million samples per second have been determined. Structural and electrical circuits, as well as software for a specialized computer system for studying thermoelectric parameters of both bulk and thin-film thermoelectric materials, and express analysis of the operational characteristics of finished modules have been developed. It has been shown that the proposed scheme copes well with the task. And the use of FPGA and 32-bit microcontrollers provide sufficient processing speed up to 200 MSPS and the necessary synchronization modes for the implementation of the Harman pulse method even when studying films of nanometer thickness.

Experimental studies of both bulk thermoelectric modules based on Bi2Te3 and thin-film thermoelectric material based on PbTe have been carried out. The effectiveness of the developed tools and techniques has been shown, which made it possible to more than halve the time for sample preparation and experiment. Based on the presented models, all the main thermoelectric and operational parameters have been determined, in particular, electrical conductivity, Seebeck coefficient, thermal conductivity, thermoelectric figure of merit.

As a result of the development of specialized computer tools, it was possible to reduce the labor intensity of the process of measuring the main electrical and operational parameters of semiconductor thermoelectric materials and energy conversion modules based on them, as well as to automate the process of defects identification of thermoelectric modules. The labor intensity of the research process has decreased not only due to the automation of the measurement process, but also due to an optimized technique that allows research on a sample of one configuration, since the manufacture and preparation of samples are the most laborious

Author Biographies

Roman Dunets, Lviv Polytechnic National University

Doctor of Technical Sciences, Professor, Head of Department

Department of Specialized Computer Systems

Bogdan Dzundza, Lviv Polytechnic National University

PhD, Associate Professor

Department of Specialized Computer Systems

Liliia Turovska, Ivano-Frankivsk National Medical University

PhD, Associate Professor

Department of Medical Informatics, Medical and Biological Physics

Myroslav Pavlyuk, Vasyl Stefanyk Precarpathian National University

PhD, Associate Professor

Department of Computer Engineering and Electronics

Omelian Poplavskyi, Vasyl Stefanyk Precarpathian National University

PhD, Associate Professor

Department of Life Safety

References

  1. Beltrán-Pitarch, B., Prado-Gonjal, J., Powell, A. V., García-Cañadas, J. (2019). Experimental conditions required for accurate measurements of electrical resistivity, thermal conductivity, and dimensionless figure of merit (ZT) using Harman and impedance spectroscopy methods. Journal of Applied Physics, 125 (2), 025111. doi: https://doi.org/10.1063/1.5077071
  2. Vineis, C. J., Shakouri, A., Majumdar, A., Kanatzidis, M. G. (2010). Nanostructured Thermoelectrics: Big Efficiency Gains from Small Features. Advanced Materials, 22 (36), 3970–3980. doi: https://doi.org/10.1002/adma.201000839
  3. Ruvinskii, M. A., Kostyuk, O. B., Dzundza, B. S. (2016). The Influence of the Size Effects on the Termoelectrical Properties of PbTe Thin Films. Journal of Nano- and Electronic Physics, 8 (2), 02051-1–02051-6. doi: http://doi.org/10.21272/jnep.8(2).02051
  4. Freik, D. M., Dzundza, B. S., Lopyanko, M. A., Yavorsky, Ya. S., Tkachuk, A. I., Letsyn, R. B. (2012). Structure and Electrical Properties of Thin Films of Pure and Bismuth-Doped Lead Telluride. Journal of Nano- and Electronic Physics, 4 (2), 02012-1–02012-5. Available at: https://jnep.sumdu.edu.ua/uk/component/content/full_article/392
  5. Dunets, R., Dzundza, B., Deichakivskyi, M., Mandzyuk, V., Terletsky, A., Poplavskyi, O. (2020). Methods of computer tools development for measuring and analysis of electrical properties of semiconductor films. Eastern-European Journal of Enterprise Technologies, 1 (9 (103)), 32–38. doi: https://doi.org/10.15587/1729-4061.2020.195253
  6. Martin, J., Tritt, T., Uher, C. (2010). High temperature Seebeck coefficient metrology. Journal of Applied Physics, 108 (12), 121101. doi: https://doi.org/10.1063/1.3503505
  7. De Boor, J., Müller, E. (2013). Data analysis for Seebeck coefficient measurements. Review of Scientific Instruments, 84 (6), 065102. doi: https://doi.org/10.1063/1.4807697
  8. Druzhinin, A., Ostrovskii, I., Khoverko, Y., Rogacki, K., Kogut, I., Golota, V. (2018). Nanoscale polysilicon in sensors of physical values at cryogenic temperatures. Journal of Materials Science: Materials in Electronics, 29 (10), 8364–8370. doi: https://doi.org/10.1007/s10854-018-8847-0
  9. Burkov, A. T., Fedotov, A. I., Novikov, S. V. (2016). Methods and Apparatus for Measuring Thermopower and Electrical Conductivity of Thermoelectric Materials at High Temperatures. Thermoelectrics for Power Generation - A Look at Trends in the Technology. doi: https://doi.org/10.5772/66290
  10. Kumar, A., Patel, A., Singh, S., Kandasami, A., Kanjilal, D. (2019). Apparatus for Seebeck coefficient measurement of wire, thin film, and bulk materials in the wide temperature range (80–650 K). Review of Scientific Instruments, 90 (10), 104901. doi: https://doi.org/10.1063/1.5116186
  11. Tur, Y., Pavlovskyi, Y., Virt, I. (2019). Measurement of Thermoelectric Parameters of Thin-Film Semiconductor Materials Using the Harman Method. Physics and Chemistry of Solid State, 20 (3), 306–310. doi: https://doi.org/10.15330/pcss.20.3.306-310
  12. Harman, T. C., Cahn, J. H., Logan, M. J. (1959). Measurement of Thermal Conductivity by Utilization of the Peltier Effect. Journal of Applied Physics, 30 (9), 1351–1359. doi: https://doi.org/10.1063/1.1735334
  13. Favaloro, T., Ziabari, A., Bahk, J.-H., Burke, P., Lu, H., Bowers, J. et. al. (2014). High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices. Journal of Applied Physics, 116 (3), 034501. doi: https://doi.org/10.1063/1.4885198
  14. Farzaneh, M., Maize, K., Lüerßen, D., Summers, J. A., Mayer, P. M., Raad, P. E. et. al. (2009). CCD-based thermoreflectance microscopy: principles and applications. Journal of Physics D: Applied Physics, 42 (14), 143001. doi: https://doi.org/10.1088/0022-3727/42/14/143001
  15. Gromov, G. G., Yershova, L. B. (2007). Complex method to control the quality of construction and performance reliability of thermoelectric modules in optoelectronic devices. Applied physics, 4, 99–106. Available at: http://applphys.orion-ir.ru/appl-07/07-4/PF-07-4-99.pdf
  16. Defossez, M. (2012). Serial LVDS High-Speed ADC Interface. XAPP524. v1.1. XILINX. Available at: https://www.xilinx.com/support/documentation/application_notes/xapp524-serial-lvds-adc-interface.pdf
  17. Interfacing Analog to Digital Converters to FPGAs. A Lattice Semiconductor White Paper (2007). Available at: http://application-notes.digchip.com/030/30-20827.pdf
  18. Dunets, R., Dzundza, B., Kostyuk, O. (2020). Specialized software and hardware for impedance spectroscopy of thermoelectric energy converters. Measuring Equipment and Metrology, 81 (4), 18–24. doi: https://doi.org/10.23939/istcmtm2020.04.018
  19. Penco, G., Barni, D., Michelato, P., Pagani, C. (2001). Thermal properties measurements using laser flash technique at cryogenic temperature. PACS2001. Proceedings of the 2001 Particle Accelerator Conference (Cat. No.01CH37268). doi: https://doi.org/10.1109/pac.2001.986637

Downloads

Published

2021-04-30

How to Cite

Dunets, R., Dzundza, B., Turovska, L., Pavlyuk, M., & Poplavskyi, O. (2021). Features for the design of a specialized information-measuring system for the study of thermoelectric properties of semiconductors . Eastern-European Journal of Enterprise Technologies, 2(5 (110), 23–31. https://doi.org/10.15587/1729-4061.2021.227135

Issue

Vol. 2 No. 5 (110) (2021): Applied physics

Section

Applied physics

License

Copyright (c) 2021 Роман Богданович Дунець, Богдан Степанович Дзундза, Лилия Вадимовна Туровская, Мирослав Федорович Павлюк, Омелян Павлович Поплавский

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.