Peculiarities of silicon basis growing for polysilicon production
DOI:
https://doi.org/10.15587/1729-4061.2012.4614Keywords:
polysilicon, evaporated layer, stress, gas environmentAbstract
The article considers the most accepted and well-proven method of polysilicon production, using the “Siemenstechnology”, which has been used for over 50 years. For this process, silicon bar-wafers are grown. There are certain requirements for bar-wafers as to the degree of purity, level of residual thermal stress and mechanical strength. To achieve high purity of bar-wafers, growing process is carried out in a vacuum.The analysis of the growing process showed that during the vacuum growing, silicon vaporizes from the surface of melt and condenses on the cold surfaces of accessory, walls of growing chamber and on the surface of the grown bar-wafers.
One of the areas that may be used for bar-wafers growing is the growing in the gas environment (e.g. argon) at the pressure greater or equal to atmospheric. In this case, the vaporization of melt zone reduces considerably, and the surface of bar-wafer will not have the evaporated silicon layer, its oxides and nitrides.
The conversion to the growing in gas environment using multiturn, with consecutive joining of turns of inductor, leads to gas ionization and accident risk. To reduce the stress on inductor it is necessary to use a single-turn inductor.
While applying a single-turn inductor, the stress is inversely proportional to the width of inductor’s turn. That is why, the width plays essential role in the melting process, as it helps to avoid accident risk and gas ionization.
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