Chemical deposition of CDS films from ammoniac-thiourea solutions
DOI:
https://doi.org/10.15587/1729-4061.2018.128093Keywords:
photoelectric converters, cadmium sulfide, chemical deposition, turbidity, ammoniac-thiourea solutionsAbstract
This paper investigates the process of chemical deposition of CdS films from ammonia-thiourea solutions. It was established that a change in the turbidity of solution occurs in the process of chemical deposition. The results of visual observations and measurement of turbidity of solution allowed us to establish that these dependences could be used to monitor the status of the process. Visual observations correlate with the obtained dependences for turbidity and suggest that the chemical deposition of CdS includes the accumulation of colloidal-dispersed precipitate in the volume of solution, agglomeration of CdS particles, and a stationary mode of the CdS film growth at the surface of a sample. The first stage of the process is matched by a sharp increase in the turbidity of solution; the second stage is accompanied by the emergence of a maximum in the dependence. No significant change in turbidity occurs at the third stage. The observation of morphology of the resulting precipitate allowed us to establish working concentrations of reagents in solution, which ensure obtaining a high-quality CdS film with a thickness not less than 100 μm. The working concentrations of cadmium chloride, ammonia, and thiourea are, respectively, 1.8, 0.6, and 8.4 g·l–1.
It was assumed that the CdS formation is accompanied by the formation of thiourea. This is confirmed by data on the analysis of a working solution. An analysis of the solution revealed high concentrations of the CO32– ions, which are a product of the thiourea decomposition. The data obtained are a preliminary stage in the development of a technology of chemical deposition of CdS films from ammonia-thiourea solutions.
References
- Gibson, P. N., Özsan, M. E., Lincot, D., Cowache, P., Summa, D. (2000). Modelling of the structure of CdS thin films. Thin Solid Films, 361-362, 34–40. doi: 10.1016/s0040-6090(99)00833-0
- Senthil, K., Mangalaraj, D., Narayandass, S. K. (2001). Structural and optical properties of CdS thin films. Applied Surface Science, 169-170, 476–479. doi: 10.1016/s0169-4332(00)00732-7
- Jadhav, U. M., Patel, S. N., Patil, R. S. (2013). Room temperature deposition of nanocrystalline CdS thin film by successive ionic layer adsorption and reaction method. Research Journal of Material Sciences, 1 (1), 21–25.
- Pathan, H. M., Sankapal, B. R., Lokhande, C. D. (2001). Preparation of CdIn2S4 thin films by chemical method. Ind. J. Eng. Mat. Sci., 8, 271–274.
- Gopinathan, С., Sarveswaran, T., Mahalakshmi, K. (2011). Studies on CdS nanocrystalline thin films with different S/Cd ratios prepared using chemical bath deposition method. Advanced Studies in Theoretical Physics, 5 (4), 171–183.
- Khallaf, H., Oladeji, I. O., Chai, G., Chow, L. (2008). Characterization of CdS thin films grown by chemical bath deposition using four different cadmium sources. Thin Solid Films, 516 (21), 7306–7312. doi: 10.1016/j.tsf.2008.01.004
- Memon, A. A., Dilshad, M., Revaprasadu, N., Malik, M. A., Raftery, J., Akhtar, J. (2015). Deposition of cadmium sulfide and zinc sulfide thin films by aerosol-assisted chemical vapors from molecular precursors. Turkish Journal of Chemistry, 39, 169–178. doi: 10.3906/kim-1407-37
- Akif Shikhan Aliyev, M., El-rouby, M. (2013). Electrochemical Studies on the Cathodic Electrodeposition of n-type semiconductor CdS thin film from Thiosulfate Acidic Aqueous Solution. International Journal of Thin Films Science and Technology, 2 (3), 195–205. doi: 10.12785/ijtfst/020305
- Kumar, V., Sharma, D. K., Bansal, M. K., Dwivedi, D. K., Sharma, T. P. (2011). Synthesis and characterization of screen-printed CdS films. Science of Sintering, 43 (3), 335–341. doi: 10.2298/sos1103335k
- Prema, A. A., Xavier, R. J., Sahayaraj, P., Pragathiswaran, C., Dharmalingam, V. (2016). Characterization of cadmium sulfide thin film grown by chemical bath deposition technique with SEM, XRD, EDAX and AFM analysis. Der Pharma Chemica, 8 (4), 96–100.
- Maske, D. (2016). Characterization of CdS thin films by chemical bath deposition. International Journal of Scientific and Research Publications, 6 (6), 264–266.
- Sincheskul, A., Pancheva, H., Loboichenko, V., Avina, S., Khrystych, O., Pilipenko, A. (2017). Design of the modified oxide-nickel electrode with improved electrical characteristics. Eastern-European Journal of Enterprise Technologies, 5 (6 (89)), 23–28. doi: 10.15587/1729-4061.2017.112264
- Smirnova, O., Pilipenko, A., Pancheva, H., Zhelavskyi, A., Rutkovska, K. (2018). Study of anode processes during development of the new complex thiocarbamidecitrate copper plating electrolyte. Eastern-European Journal of Enterprise Technologies, 1 (6 (91)), 47–51. doi: 10.15587/1729-4061.2018.123852
- Ortega-Borges, R. (1993). Mechanism of Chemical Bath Deposition of Cadmium Sulfide Thin Films in the Ammonia-Thiourea System. Journal of The Electrochemical Society, 140 (12), 3464. doi: 10.1149/1.2221111
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Copyright (c) 2018 Hanna Pancheva, Olena Khrystych, Evgeniia Mykhailova, Maryna Ivashchenko, Alexei Pilipenko
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