Physical and technological aspects of multicharge implantation of gallium arsenide in device and circuit structures

Authors

  • Степан Петрович Новосядлий Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025, Ukraine
  • Тарас Петрович Кіндрат Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025, Ukraine
  • Любомир Васильович Мельник Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.18109

Keywords:

ion doping, multi-charge additives, semi-insulating gallium arsenide

Abstract

The development of microelectronics in Ukraine was accompanied by altering of four generations of ion implantation equipment. Nowadays, ion implantation devices of three classes of small and medium doses, high doses and high energies, are used for micro-, opto- and nanoelectronics. For many years, double-chamber ''Vezuviy-3'' and its modified version ''Vezuviy-3M'', with drum-type receiving units and electrostatic ion beam scanning, have been the most popular among light-dose devices. Despite its reasonable price, it has high efficiency (300 plates mm per hour), high implantation heterogeneity ( over a plate) and performance reliability (availability factor was). High dose devices ''Vezuviy-4'' and ''Vezuviy-8'' of the 70-80s and their modified versions, with combined mechanical and electro-magnetic scanning, were produced using ion beam post-acceleration and receiving unit, which was both at high and ground potentials. The development of high-energy implantation was based on using multi-charge ions (2-4) of the main dopants. The energies below 2 MeB at total accelerating voltage 400 KeB and ion beam current  below 1mА and  below 0,3 mА were recorded in one of modified versions of high-energy implantation ''Vezuviy-9''. It was the starting point of decreasing radiation defects in BIC structures.

Author Biographies

Степан Петрович Новосядлий, Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025

Doctor of Technical Sciences, Professor

Department of Computer Engineering and Electronics

Тарас Петрович Кіндрат, Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025

Graduate student

Department of Computer Engineering and Electronics

Любомир Васильович Мельник, Carpathian National University. Stefanik Str. Shevchenko, 57, Ivano-Frankivsk, Ukraine, 76025

Graduate student

Department of Computer Engineering and Electronics

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Published

2013-10-24

How to Cite

Новосядлий, С. П., Кіндрат, Т. П., & Мельник, Л. В. (2013). Physical and technological aspects of multicharge implantation of gallium arsenide in device and circuit structures. Eastern-European Journal of Enterprise Technologies, 5(5(65), 29–36. https://doi.org/10.15587/1729-4061.2013.18109

Issue

Vol. 5 No. 5(65) (2013): Applied physics

Section

Applied physics

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Copyright (c) 2014 Степан Петрович Новосядлий, Тарас Петрович Кіндрат, Любомир Васильович Мельник

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