Predicting reliability of structures GaP-SnO2 on the based of 3D model of their surface

Authors

  • Світлана Львівна Воропаєва Yuriy Fedkovych Chernivtsi National University 28 University street, Chernivtsi, Ukraine, 58000, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2013.19683

Keywords:

3D modeling, UV radiation sensor, information-measuring system

Abstract

The application software of Math Lab package for 3D modeling of morphological characteristics of UV radiation sensor surface based on GaP was used. It was shown that using 3D modeling is a software tool, which allows to visualize heterogeneities of contacts both during their production and selective current control during their operation, analyze the design and technological features of their formation and generate recommendations on their structure improvement. Along with the studies of photoelectric and electro-physical characteristics of semiconductor sensors, 3D modeling of surface morphology of the photosensitive layer of sensors allows to determine the reasons of their degradation parameters and predict the reliability of further operation of the information-measuring system.

The revealed morphological surface heterogeneities of the studied UV sensors can be caused by local etching of layer after etching of, or formation of islet oxidizing forms on the  surface before applying.

Author Biography

Світлана Львівна Воропаєва, Yuriy Fedkovych Chernivtsi National University 28 University street, Chernivtsi, Ukraine, 58000

PhD in Engineering

Department of Computer System and Network

References

  1. Vorobets, G. I. Computer modelling of laser irradiation absorption in multilayer semiconductor structures [Tеxt] / Vorobets G. I., Vorobets O. I., Voropaeva S. L., Tanasyuk Yu. V.// Naukovy Visnyk Chernivetskogo Universitetu: Zbirnyk Naukovyh Prats. Vyp. 426: Fizyka. Elektronika. Thematic issue “Computer systems and components”. Part II. – Chernivtsi, 2008. – P.87-92.
  2. Vorobets, G. I. Fundamental and applied aspects of laser interaction with materials on the interface devices: computer modeling and experimental investigations [Tеxt] / G. I. Vorobets, O. I. Vorobets, S. L. Voropaeva, Yu. G. Dobrovolsky, T. A. Melnychuk // E-MRS 2005, Spring Meeting, Scientific Programme. May 31 – June 3, 2005. – SYMPOSIUM J. – P.J-5/19.
  3. Vorobets, G. I. Aging and degradation of aluminium-silicon structures with a Schottky barrier after a pulsed laser irradiation [Tеxt] / G. I. Vorobets, O. I. Vorobets, A. P. Fedorenko, A. G. Shkavro // Functional materials. – 2003. – Vol. 10, №3. – P.468-473.3.
  4. Vorobets, G. I. Laser manipulation of clusters, structural defects and nanoaggregates in barrier structures on silicon and binary semiconductors [Tеxt] / G. I. Vorobets, O. I. Vorobets, V. N. Strebegev // Applied Surface Science. – 2005. – 247. – P.590-601.
  5. Комащенко, В. Н. Селективные и широкополосные ультрафиолетовые сенсоры [Tекст] / В.Н. Комащенко, К. В. Колежук, Е. Ф. Венгер, Г. И. Шереметова, О. А. Мищук, А. В. Комащенко // Письма в ЖТФ. – 2002. – Том 28. – Вып. 19. – С. 32–36.
  6. Malik, A. A new high ultraviolet sensivity FTO-GaP Schottky photodiode fabricated by spray pyrolysis [Tеxt] / A. Malik, A. Seco, E. Fortunator, R. Martins, B. Shabashkevich, S. Piroszenko // Semicond. Sci. Technol. – № 13. – 1998. – Р.102-107.
  7. Mandalapu, L. J. Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy [Tеxt] / L. J. Mandalapu, F. X. Xiu, Z. Yang, J. L. Liu // Science Direct. Solid-State Electronics 51 — 2007. - р.1014-1017.
  8. Агекян, В. Ф. Оптоэлектронные явления в слоях, полученных нитрированием GaP и GaAs [Текст] / В. Ф. Агекян, В. И. Іванов-Омский, В. Н. Князевский, В. Ю. Рудь, Ю. В. Рудь // Физика и техника полупроводников. – 1998. - Том 32. – № 10. – С. 1203–1205.
  9. Рембеза, С. И. Микроструктура и физические свойства тонких пленок SnO2 [Текст] / С. И. Рембеза, Т. В. Свистова, Е. С. Рембеза, О. И. Борсякова // Физика и техника полупроводников. – 2001. – Том 35. – Вып. 7. – С. 796–800.
  10. Рембеза, С. И. Физические свойства пленок SnO2, обработанных некогерентным импульсным излучением [Текст] / С. И. Рембеза, Е. С.Рембеза, Т. В. Свистова, О. И. Борсякова // Физика и техника полупроводников. – 2006. Том 40. - Вып. 1. – С. 57–60.
  11. Vorobets, G. I., Vorobets, O. I., Voropaeva, S. L., Tanasyuk, Yu. V. (2008). Computer modelling of laser irradiation absorption in multilayer semiconductor structures. Naukovy Visnyk Chernivetskogo Universitetu. Thematic issue “Computer systems and components”, 426, Part II, 87-92.
  12. Vorobets, G. I., Vorobets, O. I., Voropaeva, S. L., Dobrovolsky, Yu. G., Melnychuk, T. A. (2005). Fundamental and applied aspects of laser interaction with materials on the interface devices: computer modeling and experimental investigations. E-MRS 2005, Spring Meeting, Scientific Programme, J-5/19.
  13. Vorobets, G.I., Vorobets, O.I., Fedorenko, A.P., Shkavro A.G. (2003) Aging and degradation of aluminium-silicon structures with a Schottky barrier after a pulsed laser irradiation Functional materials, Vol. 10, №3. 468-473.
  14. Vorobets, G. I., Vorobets, O. I., & Strebegev, V. N. (2005). Laser manipulation of clusters, structural defects and nanoaggregates in barrier structures on silicon and binary semi-conductors. Applied surface science, 247(1), 590-601.
  15. Komashchenko, V. N., Kolezhuk, K. V., Venher, E. F., Sheremetova, H. Y., Myshchuk, O. A., & Komashchenko, A. V. (2002). Selektyvnye y shyrokopolosnye ultrafyoletovye sensory. Pysma v ZhTF, 28(19).
  16. Malik, A., Sêco, A., Fortunato, E., Martins, R., Shabashkevich, B., & Piroszenko, S. (1998). A new high ultraviolet sensitivity FTO-GaP Schottky photodiode fabricated by spray pyrolysis. Semiconductor science and technology, 13(1), 102.
  17. Mandalapu, L. J., Xiu, F. X., Yang, Z., & Liu, J. L. (2007). Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy. Solid-state electronics, 51(7), 1014-1017.
  18. Ahekian, V. F., Yvanov–Omskyi, V. Y., Kniazevskyi, V. N., Rud, V. Iu., & Rud, Iu. V. (1998). Optoelektronnye yavlenyia v sloiakh, poluchennykh nytryrovanyem GaP y GaAs. Fyzyka y tekhnyka poluprovodnykov, 32(10), 1203-1205
  19. Rembeza, S. Y., Svystova, T. V., Rembeza, E. S., & Borsiakova, O. Y. (2001). Mykrostruktura y fyzycheskye svoistva tonkykh plenok SnO2. Fyzyka y tekhnyka poluprovodnykov, 35(7), 796-800.
  20. Rembeza, S. Y., Rembeza, E. S., Svystova, T. V., & Borsiakova, O. Y. (2006). Fyzycheskye svoistva plenok SnO. Fyzyka y tekhnyka poluprovodnykov, 40(1), 57-60

Downloads

Published

2014-01-04

How to Cite

Воропаєва, С. Л. (2014). Predicting reliability of structures GaP-SnO2 on the based of 3D model of their surface. Eastern-European Journal of Enterprise Technologies, 6(12(66), 96–98. https://doi.org/10.15587/1729-4061.2013.19683

Issue

Vol. 6 No. 12(66) (2013): Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

Section

Physical and technological problems of radio engineering devices, telecommunication, nano-and microelectronics

License

Copyright (c) 2014 Світлана Львівна Воропаєва

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The consolidation and conditions for the transfer of copyright (identification of authorship) is carried out in the License Agreement. In particular, the authors reserve the right to the authorship of their manuscript and transfer the first publication of this work to the journal under the terms of the Creative Commons CC BY license. At the same time, they have the right to conclude on their own additional agreements concerning the non-exclusive distribution of the work in the form in which it was published by this journal, but provided that the link to the first publication of the article in this journal is preserved.

A license agreement is a document in which the author warrants that he/she owns all copyright for the work (manuscript, article, etc.).
The authors, signing the License Agreement with TECHNOLOGY CENTER PC, have all rights to the further use of their work, provided that they link to our edition in which the work was published.
According to the terms of the License Agreement, the Publisher TECHNOLOGY CENTER PC does not take away your copyrights and receives permission from the authors to use and dissemination of the publication through the world's scientific resources (own electronic resources, scientometric databases, repositories, libraries, etc.).
In the absence of a signed License Agreement or in the absence of this agreement of identifiers allowing to identify the identity of the author, the editors have no right to work with the manuscript.
It is important to remember that there is another type of agreement between authors and publishers – when copyright is transferred from the authors to the publisher. In this case, the authors lose ownership of their work and may not use it in any way.