Monosilane plasma pyrolysis reactor

Authors

DOI:

https://doi.org/10.15587/1729-4061.2014.23395

Keywords:

plasma pyrolysis, reactor, silicon, plasmotron, skull, monosilane, cyclone, condensation

Abstract

The technology for continuous production of silicon granules from monosilane through the liquid phase in an apparatus is based on a great variety of interrelated physical processes. A complex mathematical and full-scale modeling of equipment and processes of production and condensation of silicon vapors on a hot wall from various materials with the skull formation, liquid silicon flow, obtaining silicon droplets, their cooling, was made. As a result of the conducted studies, it was shown that any scientific technical constraints on the practical implementation of the technology of continuous granular silicon production in a plasma pyrolysis apparatus are absent. The adequate mathematical description of the process and equipment with different degrees of accuracy that allows implementing the engineering development of the pilot plant productivity of 100 kg/h was obtained. The discovered phenomenon of rapid collapse of the liquid silicon film into droplets allows creating a granulator on this basis. Thus, the conditions actually in one process operation of combining two processes – condensation of silicon vapor to liquid and production of granules are provided.

Author Biography

Станислав Владимирович Петров, The Gas Institute NASU 39 Degtyarivs’ka St., 03113 Kyiv, Ukraine

Professor

Department of plasma technologies

References

  1. Петров, С. В. Плазменный процесс получения ≪солнечного≫ кремния [Текст] / С. В. Петров // Современная электрометаллургия. – 2013. – № 3. – С. 37–44.
  2. Polysilicon Production based on Monosilane Technology [Text] / Schmid Silicon Technology GmbH, 2011. – 37 p.
  3. Иванов, В. М. Современные тенденции развития промышленности поликристаллического полупроводникового кремния [Текст] / В. М. Иванов, Ю. В. Трубицын // Науковий вісник КУЕІТУ. Нові технології. – 2009. – № 1 (23). – С. 30–35.
  4. Нагорный, С. Л. Основные требования к технологическим схемам получения кремния солнечного качества [Текст] : наук. пр. / С. Л. Нагорный, Т. В. Критская, Л. Я. Шварцман // Металургія. Запорiзька державна iнженерна академiя. – 2009. – Вип. 19. – С. 72–81.
  5. Абдюханов, И. М. Разработка основ технологии производства металлургического кремния повышенной чистоты для наземной фотоэнергетики [Текст] / И. М. Абдюханов // Российский химический журнал (Ж. Рос. хим. об-ва им. Д. И. Менделеева). – 2001. – Т. XLV, № 5-6. – С. 107–111.
  6. Яркин, В. Н. Кремний для солнечной энергетики: конкуренция технологий, влияние рынка, проблемы развития. [Текст] / В. Н. Яркин, О. А. Кисарин, Ю. В. Реков, И. Ф. Червоний // Теория и практика металлургии. – 2010. – № 1-2. – С. 114–126.
  7. Ove Odden, Jan Comparison of the energy consumption in different production processes for solar grade silicon. [Text] / Jan Ove Odden, G. Halvorsen, H. Rong, R. Glockner. – Silicon for the Chemical and Solar Industry IX Oslo, Norway. – 2008. – 16 р.
  8. Петров, С. В. Плазменные технологи в воспроизводимых источниках энергии [Текст] / С. В. Петров, С. Г. Бондаренко, Е. Г. Дидык // Енергетика та електрифікація. – 2010. – № 1. – С. 53–59.
  9. Петров, С. В. Плазменная технология получения солнечного кремния [Текст] / С. В. Петров, В. А. Жовтянский // Энергоэффективность. – 2013. – С. 82–85.
  10. Hogness, T. R. The thermal decomposition of silane [Text] / T. R. Hogness, Th. L. Wilson, W. C. Johnson // J. American Chem. Soc. – 1996. – № 38. – P. 108–112.
  11. Petrov, S. V. (2013). Plazmennyj process poluchenija «solnechnogo » kremnija. Sovremennaja jelektrometallurgija, 3, 37–44.
  12. Polysilicon Production based on Monosilane Technology (2011). Schmid Silicon Technology GmbH, 37.
  13. Ivanov, V. M., Trubicyn, Ju. V. (2009). Sovremennye tendencii razvitija promyshlennosti polikristallicheskogo poluprovodnikovogo kremnija. Naukovij vіsnik KUEІTU. Novі tehnologіi, 1 (23), 30–35.
  14. Nagornyj, S. L., Kritskaja, T. V., Shvarcman, L. Ja. (2009). Osnovnye trebovanija k tehnologicheskim shemam poluchenija kremnija solnechnogo kachestva. Metalurgіja. Zaporiz’ka derzhavna inzhenerna akademija, Issue 19, 72–81.
  15. Abdjuhanov, I. M. (2001). Razrabotka osnov tehnologii proizvodstva metallurgicheskogo kremnija povyshennoj chistoty dlja nazemnoj fotojenergetiki. Rossijskij himicheskij zhurnal (Zh. Ros. him. ob-va im. D. I. Mendeleeva), Vol. XLV, № 5-6, 107–111.
  16. Jarkin, V. N., Kisarin, O. A., Rekov, Ju. V., Chervonij, I. F. (2010). Kremnij dlja solnechnoj jenergetiki: konkurencija tehnologij, vlijanie rynka, problemy razvitija. Teorija i praktika metallurgii, 1-2, 114–126.
  17. Ove Odden, Jan, Halvorsen, G., Rong, H., Glockner, R. (2008). Comparison of the energy consumption in different production processes for solar grade silicon. Silicon for the Chemical and Solar Industry IX Oslo, Norway, 16.
  18. Petrov, S. V., Bondarenko, S. G., Didyk, E. G. (2010). Plazmennye tehnologi v vosproizvodimyh istochnikah jenergii. Energetika ta elektrifіkacіja, 1, 53–59.
  19. Petrov, S. V., Zhovtjanskij, V. A. (2013). Plazmennaja tehnologija poluchenija solnechnogo kremnija. Jenergojeffektivnost’, 82–85.
  20. Hogness, T. R., Wilson, Th. L., Johnson, W. C. (1996). The thermal decomposition of silane. J. American Chem. Soc., 38, 108–112.

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Published

2014-04-15

How to Cite

Петров, С. В. (2014). Monosilane plasma pyrolysis reactor. Eastern-European Journal of Enterprise Technologies, 2(5(68), 31–38. https://doi.org/10.15587/1729-4061.2014.23395

Issue

Vol. 2 No. 5(68) (2014): Applied physics

Section

Applied physics

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Copyright (c) 2014 Станислав Владимирович Петров

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