Development of new thermoelectric semiconductor devices, operating in the stationary mode
DOI:
https://doi.org/10.15587/1729-4061.2012.4620Keywords:
thermoelements, physical processes, temperature distribution, thermal e.m.f.Abstract
One of the structural restrictions for the typical thermoelectric devices was the modulus thickness, i. e. spacing between hot and cold junction. When the spacing is small, the conducted heat transfer prevents great temperature drop. When the spacing is big Joule heat release in arms limited the productivity of the thermoelectric device. Suggested radiating thermoelectric device lack such deficiency as there is no hot junction and parasitic conducted heat transfer on the cold junction. Radiating thermoelectric device may be produced as a thin transparent multilayer structure. The usage of few stages at the absence of Joule heat release for the account of ohmic resistance of p-n branches, which look like thin film, allows achieving of extremely low temperatures applied in cryoelectronics. Additional advantage is the maintenance of operability of radiating thermoelectric device even in superconductivity mode, as there is no destabilizing heat release at cooling Peltier effect for the account of various energy levels of electrons in dissimilar materials in superconductivity mode.References
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