Peculiarities of capacity characteristics of n -TіO2/p-CdTe heterostructures, obtained by spray- pirolise method

Authors

  • Віктор Васильович Брус Frantsevich Institute of Problems of Materials Science National Academy of Sciences of Ukraine st. Irene Wilde, 5, Chernivtsi, Ukraine, 58000, Ukraine
  • Марія Іванівна Ілащук Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Орест Архипович Парфенюк Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Павло Дмитрович Мар’янчук Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine
  • Наталія Миколаївна Гавалешко Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012, Ukraine

DOI:

https://doi.org/10.15587/1729-4061.2012.6025

Keywords:

CdTe, TіO2, heterostructures, spray-pirolise method

Abstract

The analysis of electrical properties of anisotype heterojunctions ТіО2/p-CdTe, prepared by TiO2 thin film deposition onto freshly cleaved CdTe single crystal substrates using the spray pyrolysis technique, was carried out. The determined height of the potential barrier of the heterojunction under investigation еφк are equal to 1.36 and 2.94 eV at T=295 K and T=0 K. Since the electrical junction is formed in CdTe (Eg=1,5 еV), the obtained values of еφк were explained by the formation of a thin high-resistance layer on the semiconductor’s surface as well as by the presence of surface states at the heterojunction interface. The established features of the C-V characteristics well correlate with the mentioned assumptions

Author Biographies

Віктор Васильович Брус, Frantsevich Institute of Problems of Materials Science National Academy of Sciences of Ukraine st. Irene Wilde, 5, Chernivtsi, Ukraine, 58000

Рostgraduate student

Chernivtsi Branch

Марія Іванівна Ілащук, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Candidate of physico-mathematical sciences, Professor assistant

Department of Electronics and Energy Engineering

Орест Архипович Парфенюк, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Doctor, Professor

Department of Electronics and Energy Engineering

Павло Дмитрович Мар’янчук, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Doctor, Professor, Head of the Department

Department of Electronics and Energy Engineering

Наталія Миколаївна Гавалешко, Fedkovich Chernivtsi National University st. Kotsyubinskogo 2, Chernivtsi, Ukraine, 58012

Candidate of physicо-mathematical sciences, Associate professor

Department of Electronics and Energy Engineering

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Published

2012-12-26

How to Cite

Брус, В. В., Ілащук, М. І., Парфенюк, О. А., Мар’янчук, П. Д., & Гавалешко, Н. М. (2012). Peculiarities of capacity characteristics of n -TіO2/p-CdTe heterostructures, obtained by spray- pirolise method. Eastern-European Journal of Enterprise Technologies, 6(12(60), 37–40. https://doi.org/10.15587/1729-4061.2012.6025

Issue

Vol. 6 No. 12(60) (2012): Sensory semiconductor devices

Section

Sensory semiconductor devices

License

Copyright (c) 2014 Віктор Васильович Брус, Марія Іванівна Ілащук, Орест Архипович Парфенюк, Павло Дмитрович Мар’янчук, Наталія Миколаївна Гавалешко

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